DMP56D0UFB
Green
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
ID
ESD Protected Gate
V(BR)DSS
RDS(ON)
TA = +25°C
-200mA
-160mA
Low Input/Output Leakage
6Ω @ VGS = -4 V
8Ω @ VGS = -2.5V
Fast Switching Speed
-50V
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on) and yet maintain superior switching
Mechanical Data
)
performance, making it ideal for high efficiency power management
applications.
Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe;
Applications
DC-DC Converters
e4
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.001 grams (Approximate)
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drain
Body
Diode
X1-DFN1006-3
Gate
S
D
Gate
Protection
Diode
Source
G
ESD PROTECTED
Bottom View
Top View
Internal Schematic
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP56D0UFB-7
DMP56D0UFB-7B
Case
Packaging
X1-DFN1006-3
X1-DFN1006-3
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
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www.diodes.com
May 2015
© Diodes Incorporated
DMP56D0UFB
Document number: DS36175 Rev. 3 - 2