Datasheet > DMP2066LSN

DMP2066LSN

更新时间： 2024-09-23 12:53:07

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	115K
描述
P-CHANNEL ENHANCEMENT MODE MOSFET Low Input/Output Leakage

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中文翻译

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数据手册

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DMP2066LSN 数据手册

Product specification

DMP2066LSN

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

Mechanical Data

•

Case: SC-59

•

Low R_DS(ON)

Case Material – Molded Plastic. UL Flammability Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish - Matte Tin Solderable per MIL-STD-202,

Method 208

Terminal Connections: See Diagram

Weight: 0.014 grams (approximate)

•

40 mΩ @V_GS= -4.5V

70 mΩ @V_GS= -2.5V

•

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

"Green" Device (Note 4)

•

SC-59

Drain

Gate

Source

TOP VIEW

Internal Schematic

Pin Configuration

Maximum Ratings ^@T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-20

Unit

Gate-Source Voltage

V_GSS

±12

Drain Current (Note 1) Continuous

T_A= 25°C

_A= 70°C

-4.6

-3.7

I_D

Pulsed Drain Current (Note 2)

-18

2.0

I_DM

I_S

Body-Diode Continuous Current (Note 1)

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

1.25

Unit

P_D

Thermal Resistance, Junction to Ambient (Note 1); Steady-State

Operating and Storage Temperature Range

100

°C/W

°C

R_θ

-55 to +150

T_J, T_STG

Notes:

1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.

2. Repetitive Rating, pulse width limited by junction temperature.

3. No purposefully added lead.

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