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DMP1005UFDF-7 PDF预览

DMP1005UFDF-7

更新时间： 2024-01-22 23:08:05
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
7页 419K
描述
Small Signal Field-Effect Transistor, 12.8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, U-DFN2020-6 (TYPE F), 6 PIN

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DMP1005UFDF-7 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, S-PDSO-N6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：18 weeks
风险等级：5.7外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：12 V
最大漏极电流 (ID)：12.8 A最大漏源导通电阻：0.0085 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：S-PDSO-N6
JESD-609代码：e4湿度敏感等级：1
元件数量：1端子数量：6
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：SQUARE封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：P-CHANNEL
表面贴装：YES端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：NO LEAD端子位置：DUAL
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

DMP1005UFDF-7 数据手册

 浏览型号DMP1005UFDF-7的Datasheet PDF文件第2页浏览型号DMP1005UFDF-7的Datasheet PDF文件第3页浏览型号DMP1005UFDF-7的Datasheet PDF文件第4页浏览型号DMP1005UFDF-7的Datasheet PDF文件第5页浏览型号DMP1005UFDF-7的Datasheet PDF文件第6页浏览型号DMP1005UFDF-7的Datasheet PDF文件第7页 
DMP1005UFDF  
P-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features and Benefits  
0.6mm Profile – Ideal for Low Profile Applications  
PCB Footprint of 4mm2  
ID Max  
TC = +25°C  
-26A  
BVDSS  
RDS(ON) Max  
8.5mΩ @ VGS = -4.5V  
12mΩ @ VGS = -2.5V  
Low Gate Threshold Voltage  
-12V  
-22A  
Low On-Resistance  
ESD Protected up to 8kV  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Mechanical Data  
Description and Applications  
This MOSFET is designed to minimize on-state resistance (RDS(ON)  
Case: U-DFN2020-6 (Type F)  
)
Case Material: Molded Plastic, ―Green‖ Molding Compound;  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
and yet maintain superior switching performance, making it ideal for  
high efficiency power management applications.  
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable  
Battery Management Application  
Power Management Functions  
Load Switches  
e4  
per MIL-STD-202, Method 208  
Weight: 0.007 grams (Approximate)  
D
U-DFN2020-6 (Type F)  
G
ESD PROTECTED  
Pin1  
Gate Protection  
Diode  
S
Pin Out  
Bottom View  
Top View  
Bottom View  
Equivalent Circuit  
Ordering Information (Note 4)  
Part Number  
DMP1005UFDF-7  
DMP1005UFDF-13  
Case  
Packaging  
3,000/Tape & Reel  
10,000/Tape & Reel  
U-DFN2020-6 (Type F)  
U-DFN2020-6 (Type F)  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
U-DFN2020-6 (Type F)  
9P = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: E = 2017)  
9P  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2017  
2018  
2019  
2020  
2021  
2022  
2023  
Code  
E
F
G
H
I
J
K
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 7  
www.diodes.com  
January 2017  
© Diodes Incorporated  
DMP1005UFDF  
Document number: DS38752 Rev. 2 -2  
1234567

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