Datasheet > DMNH10H028

DMNH10H028

更新时间： 2024-11-15 18:09:39

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	941K
描述
TO-252

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DMNH10H028 数据手册

DMNH10H028

N-CHANNEL HIGH VOLTAGE MOSFET

FEATURES

 V_DS=100V,R_DS(ON)≤28mΩ@V_GS=10V,I_D=55A

 Low RDS(ON) – – Minimises Power Losses

 Low Qg – Minimises Switching Losses

 For Power Management Functions and DC-DC Converters Applications

 Surface Mount device

TO-252

MECHANICAL DATA



Case: TO-252

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.33 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

TC = +25°C

Continuous drain current, VGS =10V

TC= +100°C

Symbol

V_DS

Value

Unit

100

±20

V_GS

I_D

IDM

I_S

I_AS

E_AS

Pulsed drain current (10μs Pulse, Duty Cycle = 1%)

Maximum Continuous Body Diode Forward Current (1)

Avalanche Current, L =0. 1mH

Avalanche Energy, L =0. 1mH

Power dissipation(1)

2.2

2.0

3.7

Power dissipation(2)

Thermal resistance from Junction to ambient (1)

Thermal resistance from Junction to ambient (2)

Thermal Resistance, Junction to Case (1)

Operating and Storage temperature

1.2

-55 ~+175

R_θJA

°C/W

R_θJc

TJ,TSTG

°C/W

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Drain-Source breakdown voltage(3)

Zero gate voltage drain current(3)

Gate-body leakage current(3)

Gate-threshold voltage (3)

Drain-source on-resistance (3)

Diode forward voltage (3)

Input capacitance (4)

Output capacitance(4)

Reverse transfer capacitance(4)

Gate Resistance(4)

Turn-on delay time(4)

Turn-on rise time(4)

Symbol Min Typ Max Unit

Conditions

VGS=0V, ID=250μA

V(BR)DSS

I_DSS

100

±100

3.3

uA V_DS=100V,

nA V_DS=0V,

VGS=±20V

mΩ VGS=10V, ID=20A

VGS=0V

I_GSS

V_GS(th)

R_DS(ON)

V_SD

C_iss

C_oss

C_rss

R_g

t_d(on)

t_r

t_d(off)

t_f

2.0

2.5

0.7

2245

173

1.9

6.4

5.8

17.8

4.8

VDS=VGS, ID=250μA

1.2

IS=1.0A, VGS=0V

V_{DS=50V, VGS=0V, f=1MHz}

V_{DS=0V, VGS=0V, f=1MHz}

VDS=50V, VGS=10V

ID=20A,R^g=3.0Ω

Turn-off delay time(4)

Turn-off fall time(4)

Total Gate Charge(4)

Total gate charge(4)

Q_g

VDS=50V,VGS=6V,ID=20A

VDS=50V,VGS=10V,ID=20A

Q_g

Gate-source charge(4)

Gate-drain charge(4)

Body Diode Reverse Recovery Time(4)

Body Diode Reverse Recovery Charge(4)

Notes: 1. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

2. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

3. Short duration pulse test used to minimize self-heating effect.

Q_gs

Q_gd

t_rr

7.3

9.2

IS=20A,di/dt= 100A/μs

Q_rr

4. Guaranteed by design. Not subject to product testing.

1 / 6

E-mail:hkt@heketai.com

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