Datasheet > DMN601VK

DMN601VK

更新时间： 2024-11-25 23:14:43

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	135K
描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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DMN601VK 数据手册

DMN601VK

DUAL N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT TRANSISTOR

Lead-free Green

Features

•

Dual N-Channel MOSFET

Low On-Resistance

SOT-563

Low Gate Threshold Voltage

Low Input Capacitance

Dim Min

Max

0.30

1.25

1.70

0.50

1.10

1.70

0.60

0.30

0.18

Typ

0.25

1.20

1.60

0.15

1.10

1.55

Fast Switching Speed

Low Input/Output Leakage

Ultra-Small Surface Mount Package

Lead Free By Design/RoHS Compliant (Note 2)

ESD Protected Up To 2kV

"Green" Device (Note 4)

0.90

1.50

0.56

0.10

1.00

1.60

0.60

0.20

0.11

Mechanical Data

All Dimensions in mm

•

Case: SOT-563

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

Drain

•

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals Connections: See Diagram

D₂

G₁

S₁

Body

Diode

Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

Gate

•

Marking: See Page 2

ESD protected up to 2kV

Ordering & Date Code Information: See Page 2

Weight: 0.006 grams (approximate)

Gate

Protection

Diode

S₂

G₂

D₁

Source

EQUIVALENT CIRCUIT PER ELEMENT

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

V_DSS

Value

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 1)

V_GSS

305

800

Continuous

Pulsed (Note 3)

I_D

P_d

Total Power Dissipation (Note 1)

250

500

°C/W

°C

R_θJA

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

T_j, T_STG

-65 to +150

Note:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10µS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DS30655 Rev. 2 - 2

1 of 4

DMN601VK

www.diodes.com

12 3 4

中文翻译

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