5秒后页面跳转
DMN601DWKQ PDF预览

DMN601DWKQ

更新时间: 2024-11-24 14:54:31
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
7页 574K
描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN601DWKQ 数据手册

 浏览型号DMN601DWKQ的Datasheet PDF文件第2页浏览型号DMN601DWKQ的Datasheet PDF文件第3页浏览型号DMN601DWKQ的Datasheet PDF文件第4页浏览型号DMN601DWKQ的Datasheet PDF文件第5页浏览型号DMN601DWKQ的Datasheet PDF文件第6页浏览型号DMN601DWKQ的Datasheet PDF文件第7页 
DMN601DWKQ  
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Product Summary  
Features  
Dual N-Channel MOSFET  
Low On-Resistance  
ID Max  
BVDSS  
RDS(ON) Max  
TA = +25°C  
Low Gate Threshold Voltage  
60V  
0.3A  
3Ω @ VGS = 5V  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Ultra-Small Surface Mount Package  
ESD Protected  
Description and Applications  
This MOSFET is designed to meet the stringent requirements of  
Automotive applications. It is qualified to AEC-Q101, supported by a  
PPAP and is ideal for use in:  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
PPAP Capable (Note 4)  
Motor Control  
Power Management Functions  
Mechanical Data  
Case: SOT363  
Case Material: Molded Plastic. “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe  
(Lead-Free Plating). Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Weight: 0.006 grams (Approximate)  
D2  
D1  
D2  
G1  
S1  
SOT363  
G2  
G1  
S2  
G2  
D1  
Gate Protection  
Diode  
Gate Protection  
Diode  
S2  
S1  
ESDProtectedupto2kV  
ESD Protected up to 2kV  
Top View  
Top View  
Equivalent Circuit  
Ordering Information (Note 5)  
Part Number  
Case  
Packaging  
DMN601DWKQ-7  
SOT363  
3,000/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/product-compliance-definitions/.  
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.  
Marking Information  
SOT363  
G1  
S1  
D2  
K7K = Product Type Marking Code  
YM = Date Code Marking  
Y or Y = Year (ex: E = 2017)  
K7K YM  
M Y K 7 K  
M = Month (ex: 9 = September)  
S2  
G2  
D1  
Date Code Key  
Year  
2005  
2006  
---  
2015  
2016  
2017  
2018  
2019  
2020  
2021  
2022  
2023  
2024  
Code  
S
T
---  
C
D
E
F
G
H
I
J
K
L
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 7  
www.diodes.com  
December 2017  
© Diodes Incorporated  
DMN601DWKQ  
Document number: DS39982 Rev. 2 - 2  

与DMN601DWKQ相关器件

型号 品牌 获取价格 描述 数据表
DMN601K DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN601K_08 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN601K-7 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN601K-7-F TYSEMI

获取价格

Product specification
DMN601LT DIODES

获取价格

60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN601TK DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN601TK_09 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN601TK-7 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN601VK DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN601VK_07 DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR