Datasheet > DMN3401LDWQ

DMN3401LDWQ

更新时间： 2023-12-06 20:01:50

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	322K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN3401LDWQ 数据手册

DMN3401LDWQ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

I_Dmax

•

Dual N-Channel MOSFET

Device

BV_DSS

R_DS(ON)max

T_A= +25°C

Low On-Resistance

Low Input Capacitance

0.8A

0.4Ω @ V_GS= 10V

0.7Ω @ V_GS= 4.5V

N-

Channel

30V

Fast Switching Speed

0.57A

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen- and Antimony-Free. “Green” Device (Note 3)

The DMN3401LDWQ is suitable for automotive applications

requiring specific change control and is AEC-Q101 qualified,

is PPAP capable, and is manufactured in IATF16949:2016

certified facilities.

Description and Applications

Mechanical Data

This MOSFET is designed to meet the stringent requirements of

automotive applications. It is qualified to AEC-Q101, supported by

a PPAP and is ideal for use in:

•

Case: SOT363

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See Diagram

Terminals: FinishMatte Tin Annealed over Copper Lead-Frame.

Solderable per MIL-STD-202, Method 208

Weight: 0.027 grams (Approximate)

•

Motor Control

Power Management Functions

DC-DC Converters

•

D₁

G₂

S₂

SOT363

ESD PROTECTED

S₁

G₁

D₂

Gate Protection

Diode

Gate Protection

Diode

Top View

Pin Out

Q1 N-Channel

Q2 N-Channel

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN3401LDWQ-7

DMN3401LDWQ-13

SOT363

3000/Tape & Reel

10000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

401 = Product Type Marking Code

M = Date Code Marking

Y̅ = Year (ex: H = 2020)

M = Month (ex: 9 = September)

Date Code Key

2025

2026

2027

Year

2020

2021

2022

2023

2024

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 7

www.diodes.com

September 2020

DMN3401LDWQ

Document number: DS41997 Rev. 2 - 2

12 3 4 5 6 7

中文翻译

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与DMN3401LDWQ相关器件

型号	品牌	获取价格	描述	数据表
DMN3401LV	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3401LVQ	DIODES	获取价格	Dual N-Channel Enhancement Mode MOSFET
DMN3404L	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3404L	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance
DMN3404L-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3404L-7	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance
DMN3404LQ-7	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance
DMN3410-7	DIODES	获取价格	Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-o
DMN34D0U	DIODES	获取价格	N-Channel Enhancement Mode MOSFET
DMN36.1A	ETC	获取价格	TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| CHIP

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