Datasheet > DMN33D8LTQ

DMN33D8LTQ

更新时间： 2024-11-24 14:55:43

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	489K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN33D8LTQ 数据手册

DMN33D8LTQ

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features



N-Channel MOSFET

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Small Surface Mount Package

ESD Protected Gate 2KV

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

The DMN33D8LTQ is suitable for automotive applications

requiring specific change control; this part is AEC-Q101

qualified, PPAP capable, and manufactured in IATF 16949

certified facilities.

I_D

BV_DSS

R_DS(ON)

T_A= +25°C

200mA

115mA

5Ω @ V_GS= 4V

30V

7Ω @ V_GS= 2.5V

Description and Applications

This MOSFET is designed to meet the stringent requirements of

automotive applications. It is qualified to AEC-Q101, supported by a

PPAP and is ideal for use in:

https://www.diodes.com/quality/product-definitions/



Brushless DC Motor Control

DC-DC Converters

Mechanical Data



Load Switch



Case: SOT523

Case Material: Molded Plastic. “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish Annealed Over Alloy 42 Leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram



Weight: 0.002 grams (Approximate)

Drain

SOT523

Gate

ESD PROTECTED

Gate

Protection

Diode

Source

Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMN33D8LTQ-7

DMN33D8LTQ-13

Case

SOT523

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

3LT = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: H = 2020)

M = Month (ex: 9 = September)

Date Code Key

Year

2018

2019

2020

2021

2022

2023

2024

2025

2026

2027

2028

2029

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

August 2020

DMN33D8LTQ

Document number: DS41322 Rev. 2 - 2

12 3 4 5 6

中文翻译

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与DMN33D8LTQ相关器件

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DMN33D8LV_15	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN33D8LV-13	DIODES	获取价格	Low On-Resistance
DMN33D8LV-7	DIODES	获取价格	Low On-Resistance
DMN33D8LVQ	DIODES	获取价格	Dual N-Channel Enhancement Mode MOSFET
DMN33D9LV	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3401LDW	DIODES	获取价格	30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3401LDWQ	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3401LV	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3401LVQ	DIODES	获取价格	Dual N-Channel Enhancement Mode MOSFET

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