Datasheet > DMN2036UCB4

DMN2036UCB4

更新时间： 2023-12-06 20:08:55

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	425K
描述
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

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DMN2036UCB4 数据手册

DMN2036UCB4

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Product Summary

Features and Benefits



Built-in G-S Protection Diode against ESD 2kV HBM

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

I_S

V_SSS

R_{SS(ON) Max}

36mΩ @ V_GS= 4.5V

T_A= +25°C

24V

Description and Applications

Mechanical Data

This new generation MOSFET is designed to minimize the on-state

resistance (R_SS(ON)) and making it ideal for high efficiency power

management.



Case: X2-WLB1616-4

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

Terminal Material: SnAgCu Ball

Weight: 0.0023 grams (Approximate)



Battery Management

Load Switch

Battery Protection

ESD PROTECTED TO 2kV

N-Channel

Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMN2036UCB4-7

Case

X2-WLB1616-4

Packaging

3000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

VW/WW = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: F = 2018)

M = Month (ex: 9 = September)

Date Code Key

Year

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Code

Month

Code

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1 of 7

www.diodes.com

May 2018

DMN2036UCB4

Document number: DS39428 Rev. 3 - 2

12 3 4 5 6 7

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