5秒后页面跳转
DMN1006UCA6 PDF预览

DMN1006UCA6

更新时间: 2023-12-06 20:11:44
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
7页 519K
描述
12V N-CHANNEL ENHANCEMENT MODE MOSFET

DMN1006UCA6 数据手册

 浏览型号DMN1006UCA6的Datasheet PDF文件第2页浏览型号DMN1006UCA6的Datasheet PDF文件第3页浏览型号DMN1006UCA6的Datasheet PDF文件第4页浏览型号DMN1006UCA6的Datasheet PDF文件第5页浏览型号DMN1006UCA6的Datasheet PDF文件第6页浏览型号DMN1006UCA6的Datasheet PDF文件第7页 
DMN1006UCA6  
N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features  
CSP with Footprint 2.70mm × 1.81mm  
IS Max  
BVSSS  
RSS(ON) Typ  
5.3mΩ @ VGS = 3.8V  
TA = +25°C  
Height = 0.21mm for Low Profile  
ESD Protection of Gate  
12V  
16.6A  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
For automotive applications requiring specific change control  
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and  
manufactured in IATF 16949 certified facilities), please  
contact us or your local Diodes representative.  
https://www.diodes.com/quality/product-definitions/  
Description  
This new generation MOSFET is designed to minimize the on-state  
resistance (RSS(ON)) and yet maintain superior switching performance,  
making it ideal for high-efficiency power management applications.  
Applications  
Mechanical Data  
Battery Management  
Load Switch  
Case: X3-DSN2718-6  
Battery Protection  
Terminal Connections: See Diagram Below  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish NiPdAu. Solderable per MIL-STD-202,  
e4  
Method 208  
Weight: 0.0026 grams (Approximate)  
X3-DSN2718-6  
G1  
G2  
ESD PROTECTED  
S1  
S2  
Equivalent Circuit  
Top View  
Ordering Information (Note 4)  
Part Number  
Case  
Packaging  
DMN1006UCA6-7  
X3-DSN2718-6  
3000/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  
2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.  
Marking Information  
M2 = Product Type Marking Code  
YM = Date Code Marking  
Y or Y = Year (ex: G = 2019)  
M or M = Month (ex: 9 = September)  
Date Code Key  
Year  
2017  
2018  
2019  
2020  
2021  
2022  
2023  
2024  
2025  
Code  
E
F
G
H
I
J
K
L
M
Month  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
Code  
1
2
3
4
5
6
7
8
9
O
N
D
1 of 7  
www.diodes.com  
December 2019  
© Diodes Incorporated  
DMN1006UCA6  
Document number: DS39390 Rev. 7 - 2  

与DMN1006UCA6相关器件

型号 品牌 描述 获取价格 数据表
DMN100-7 DIODES N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

获取价格

DMN100-7-F DIODES N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

获取价格

DMN100-7-F TYSEMI N-CHANNEL ENHANCEMENT MODE MOSFET ESD Protected Gate

获取价格

DMN1008UFDF DIODES 12V N-CHANNEL ENHANCEMENT MODE MOSFET

获取价格

DMN1008UFDF-13 DIODES 12V N-CHANNEL ENHANCEMENT MODE MOSFET

获取价格

DMN1008UFDF-7 DIODES 12V N-CHANNEL ENHANCEMENT MODE MOSFET

获取价格