Datasheet > DMN1004UFV

DMN1004UFV

更新时间： 2024-09-25 01:13:47

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	375K
描述
12V N-CHANNEL ENHANCEMENT MODE MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMN1004UFV 数据手册

DMN1004UFV

12V N-CHANNEL ENHANCEMENT MODE MOSFET

PowerDI3333-8 (Type UX)

Product Summary

Features



Low R_DS(ON)– Ensures On-State Losses are Minimized

Small Form Factor Thermally Efficient Package Enables Higher

Density End Products

I_DMax

BV_DSS

R_DS(ON)Max

T_C= +25°C

70A

55A

3.8mΩ @ V_GS= 4.5V

5.1mΩ @ V_GS= 2.5V

12V



Occupies just 33% of the Board Area Occupied by SO-8 Enabling

Smaller End Product



ESD Protected Gate

Description

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

This MOSFET is designed to minimize the on-state resistance

(R_DS(ON)), yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Mechanical Data

Applications



Case: PowerDI 3333-8 (Type UX)



Power Management Functions

DC-DC Converters

Battery

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See Diagram

Terminals: Finish – Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208



Weight: 0.072 grams (Approximate)

Pin1

ESD PROTECTED

Gate Protection

Diode

Top View

Equivalent Circuit

Bottom View

Ordering Information (Note 4)

Part Number

DMN1004UFV-7

DMN1004UFV-13

Case

Packaging

2,000/Tape & Reel

3,000/Tape & Reel

PowerDI3333-8 (Type UX)

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

UF4 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Two Digits of Year (ex: 16 = 2016)

WW = Week Code (01 to 53)

UF4

PowerDI is a registered trademark of Diodes Incorporated.

1 of 7

www.diodes.com

January 2017

DMN1004UFV

Document number: DS38933 Rev. 3 - 2

12 3 4 5 6 7

中文翻译

下载PDF

与DMN1004UFV相关器件

型号	品牌	获取价格	描述	数据表
DMN1004UFV-13	DIODES	获取价格	12V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1004UFV-7	DIODES	获取价格	12V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1006UCA6	DIODES	获取价格	12V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN100-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN100-7-F	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN100-7-F	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET ESD Protected Gate
DMN1008UFDF	DIODES	获取价格	12V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1008UFDF-13	DIODES	获取价格	12V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1008UFDF-7	DIODES	获取价格	12V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN1008UFDFQ	DIODES	获取价格	12V N-CHANNEL ENHANCEMENT MODE MOSFET

与DMN1004UFV相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

6
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

11
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

79
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

71

产品中心

服务支持

精选活动

关于我们

帮助中心

DMN1004UFV

DMN1004UFV 数据手册

与DMN1004UFV相关器件

与DMN1004UFV相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DMN1004UFV

DMN1004UFV 数据手册

与DMN1004UFV相关器件

与DMN1004UFV相关文章

您还可以找

您在本页遇到什么问题？