DMN100-7

更新时间： 2024-01-04 07:09:20

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
3页	67K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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数据手册
替代型号

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DMN100-7 数据手册

DMN100

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

Extremely Low On-Resistance:

170mW @ V_GS= 4.5V

SC-59

High Drain Current: 1.1A

Ideal for Notebook Computer, Portable Phone,

PCMCIA Cards, and Battery Powered Circuits

Dim

Min

0.30

1.40

2.50

0.85

0.30

1.70

2.70

Max

0.50

1.80

3.00

1.05

0.70

2.10

3.10

0.10

1.40

0.70

0.35

TOP VIEW

Mechanical Data

Case: SC-59, Molded Plastic

Case Material - UL Flammability Rating

Classification 94V-0

Terminals: Solderable per MIL-STD-202,

Method 208

Terminal Connections: See Diagrams

Weight: 0.008 grams (approx.)

1.00

0.55

0.10

Ordering Information, See Sheet 2

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Symbol

Maximum Ratings

Characteristic

DMN100

Units

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Continuous

±20

Continuous

Pulsed

± 1.1

± 4.0

I_D

P_d

Total Power Dissipation

500

250

K/W

°C

R_qJA

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

T_j, T_STG

-55 to +150

Notes: 1. Pulse width £ 300ms, duty cycle £ 2%.

DS30049 Rev. 5 - 2

1 of 3

DMN100

12 3

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DMN100-7 替代型号

型号	品牌	替代类型	描述	数据表
DMN100-7-F	DIODES	功能相似	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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