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TM
DMMT5401
Micro Commercial Components
Features
•
•
Ideal for Low Power Amplification and Switching
Ultra-small Surface Mount Package
Epitaxial Planar Die Construction
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
Plastic-Encapsulate
Transistors
•
x
x Marking:K4S
Maximum Ratings @ 25 C Unless Otherwise Specified
O
Symbol
VCEO
VCBO
VEBO
IC
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Power Dissipation---
Rating
-150
Unit
V
V
V
A
SOT-363
-160
-5
-0.2
PD
TJ
0.2
-55 to +150
W
R
G
Operating Junction Temperature
E1
E2
C2
TSTG
Storage Temperature
-55 to +150
R
O
Electrical Characteristics @ 25 C Unless Otherwise Specified
C
B
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(IC=-1mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IE=-10uAdc, IC=0)
Collector Cutoff Current
(VCB=-120Vdc,IE=0)
Min
Max
Units
C1
B1
B2
V(BR)CEO
-150
---
Vdc
A
H
V(BR)CBO
V(BR)EBO
ICBO
-160
-5
--
---
Vdc
Vdc
uA
---
M
K
0.05
-0.05
J
F
D
Emitter Cutoff Current
(VEB=-3Vdc,IC=0)
L
IEBO
---
uA
DC Current Gain
hFE
(IC=-1mAdc, VCE=-5Vdc)
(IC=-10mAdc, VCE=-5Vdc)
(IC=-50mAdc, VCE=-5Vdc)
50
60
50
---
240
---
---
DIMENSIONS
INCHES
MIN
MM
DIM
A
MAX
.012
.053
.087
MIN
MAX
0.30
1.35
2.20
NOTE
Collector-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1mAdc)
(IC=-50mAdc, IB=-5mAdc)
Base-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1mAdc)
(IC=-50mAdc, IB=-5mAdc)
.004
.045
.079
0.10
1.15
2.00
VCE(sat)
---
---
-0.2
-0.5
Vdc
Vdc
B
C
D
F
.026
0.65Nominal
.012
.071
---
.016
.087
.004
.039
.016
.016
0.30
0.40
2.20
0.10
1.00
0.40
0.25
VBE(sat)
---
---
-1
-1
H
J
1.80
---
K
.035
.010
.004
0.90
0.25
0.10
Current Gain-Bandwidth Product
(VCE=-10Vdc, IC=-10mAdc, f=100MHz)
Output Capacitance
(VCB=-10Vdc, f=1.0MHz, IE=0)
Noise Figure
(VCE=-5V,IC=-0.2mA, f=1KHz, RS=10=)
fT
100
---
300
6.0
8
MHz
pF
dB
L
M
Cob
NF
---
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Revision: 3
2008/01/01