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DMMT5401 PDF预览

DMMT5401

更新时间: 2024-11-02 06:54:15
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
2页 79K
描述
Plastic-Encapsulate Transistors

DMMT5401 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.52Is Samacsys:N
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:150 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G6JESD-609代码:e0
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

DMMT5401 数据手册

 浏览型号DMMT5401的Datasheet PDF文件第2页 
M C C  
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TM  
DMMT5401  
Micro Commercial Components  
Features  
Ideal for Low Power Amplification and Switching  
Ultra-small Surface Mount Package  
Epitaxial Planar Die Construction  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Plastic-Encapsulate  
Transistors  
x
x Marking:K4S  
Maximum Ratings @ 25 C Unless Otherwise Specified  
O
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Power Dissipation---  
Rating  
-150  
Unit  
V
V
V
A
SOT-363  
-160  
-5  
-0.2  
PD  
TJ  
0.2  
-55 to +150  
W
R
G
Operating Junction Temperature  
E1  
E2  
C2  
TSTG  
Storage Temperature  
-55 to +150  
R
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
C
B
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
(IC=-1mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=-100uAdc, IE=0)  
Collector-Emitter Breakdown Voltage  
(IE=-10uAdc, IC=0)  
Collector Cutoff Current  
(VCB=-120Vdc,IE=0)  
Min  
Max  
Units  
C1  
B1  
B2  
V(BR)CEO  
-150  
---  
Vdc  
A
H
V(BR)CBO  
V(BR)EBO  
ICBO  
-160  
-5  
--  
---  
Vdc  
Vdc  
uA  
---  
M
K
0.05  
-0.05  
J
F
D
Emitter Cutoff Current  
(VEB=-3Vdc,IC=0)  
L
IEBO  
---  
uA  
DC Current Gain  
hFE  
(IC=-1mAdc, VCE=-5Vdc)  
(IC=-10mAdc, VCE=-5Vdc)  
(IC=-50mAdc, VCE=-5Vdc)  
50  
60  
50  
---  
240  
---  
---  
DIMENSIONS  
INCHES  
MIN  
MM  
DIM  
A
MAX  
.012  
.053  
.087  
MIN  
MAX  
0.30  
1.35  
2.20  
NOTE  
Collector-Emitter Saturation Voltage  
(IC=-10mAdc, IB=-1mAdc)  
(IC=-50mAdc, IB=-5mAdc)  
Base-Emitter Saturation Voltage  
(IC=-10mAdc, IB=-1mAdc)  
(IC=-50mAdc, IB=-5mAdc)  
.004  
.045  
.079  
0.10  
1.15  
2.00  
VCE(sat)  
---  
---  
-0.2  
-0.5  
Vdc  
Vdc  
B
C
D
F
.026  
0.65Nominal  
.012  
.071  
---  
.016  
.087  
.004  
.039  
.016  
.016  
0.30  
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
VBE(sat)  
---  
---  
-1  
-1  
H
J
1.80  
---  
K
.035  
.010  
.004  
0.90  
0.25  
0.10  
Current Gain-Bandwidth Product  
(VCE=-10Vdc, IC=-10mAdc, f=100MHz)  
Output Capacitance  
(VCB=-10Vdc, f=1.0MHz, IE=0)  
Noise Figure  
(VCE=-5V,IC=-0.2mA, f=1KHz, RS=10=)  
fT  
100  
---  
300  
6.0  
8
MHz  
pF  
dB  
L
M
Cob  
NF  
---  
www.mccsemi.com  
1 of 2  
Revision: 3  
2008/01/01  

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