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DMMT3904W-7-F PDF预览

DMMT3904W-7-F

更新时间: 2024-11-02 02:51:03
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 129K
描述
MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

DMMT3904W-7-F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.82Samacsys Description:Diodes Inc DMMT3904W-7-F Dual NPN Bipolar Transistor, 200 mA, 40 V, 6-Pin SOT-363
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):250 ns
最大开启时间(吨):70 ns

DMMT3904W-7-F 数据手册

 浏览型号DMMT3904W-7-F的Datasheet PDF文件第2页浏览型号DMMT3904W-7-F的Datasheet PDF文件第3页浏览型号DMMT3904W-7-F的Datasheet PDF文件第4页 
DMMT3904W  
MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
200 mWatts  
40 Volts  
POWER  
VOLTAGE  
FEATURES  
• NPN epitaxial silicon, planar design  
• Collector-emitter voltage VCE = 40V  
• Collector current IC = 200mA  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: SOT-363, Plastic  
Terminals: Solderable per MIL-STD-750, Method 2026  
• Approx. Weight: 0.008 gram  
• Marking: S4A  
ABSOLUTE RATINGS  
PARAMETER  
Symbol  
VCBO  
Value  
60  
Units  
V
Collector - Base Voltage  
Collector - Emitter Voltage  
VCEO  
VEBO  
I C  
40  
6.0  
V
V
Emitter - Base Voltage  
Collector Current - Continuous  
200  
mA  
mW  
OC/W  
OC  
Power Dissipation (Note2)  
Ptot  
200  
Thermal Resistance , Junction to Ambient (Note2)  
Operating and Storage Temperature Range  
RθJA  
625  
TJ,TSTG  
-55 to 150  
Note 1: Built with adjacent die from a single wafer.  
2: Device mounted on FR5 PCB: 1.0x0.75x0.62 in.  
6
5
4
1
2
3
Fig.108  
STAD-MAR.23.2007  
PAGE . 1  

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