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DMMDB4B

更新时间: 2024-11-25 06:54:15
品牌 Logo 应用领域
RFE 数据判读及分析中心
页数 文件大小 规格书
1页 116K
描述
BI-DIRECTIONAL DIAC DB3 & DB4 Series

DMMDB4B 数据手册

  
BI-DIRECTIONAL DIAC  
DB3 & DB4 Series  
SPECIFICATIONS  
Parameters  
Symbol  
*(DMM)DB3 *(DMM)DB4 Units  
28  
32  
36  
3
35  
40  
45  
3
V min  
V typ  
Breakover Voltage  
V(BR)1, V(BR)2  
V max  
V max  
V max  
mA max  
A max  
Breakover Voltage Symmetry  
Dynamic Breakback Voltage  
Breakover Current  
|V(BR)1|-|V(BR)2|  
I±V DI  
I(BR)1 AND I(BR)2  
IP  
5
5
50  
2.0  
50  
2.0  
Peak Pulse Current for  
10ms, 120pps, TA£4°C  
* DMMDB3 & DMMDB4 are DL-35 (mini-MELF).  
DB3 & DB4 are DO-35.  
DIMENSIONS  
MINI-MELF Drawing (mm)  
Cathode Mark  
DO-35 Glass Case Outline Drawing (mm)  
2.0 Max  
Cathode  
f0.52  
1.35±0.05  
A
A
0.3±0.1  
4.2 Max  
0.3±0.1  
3.3±0.1  
CURVES  
V-I Characteristics  
Repetitive Peak On-State  
Current vs Pulse Duration  
CURRENT  
Test Circuit  
Breakover  
Voltage  
1.0  
RF  
Pulse repetition rate = 120PPS  
Tz= 40°C  
D.U.T.  
VC  
120V  
RMS  
60Hz  
D28 32 35 40 50  
200W  
1%  
0.1  
D60  
Safe Operating Area  
0.1mF  
-Vbo  
Adjust for one firing in half cycle  
VOLTAGE  
0.01  
+Vbo  
Breakover  
Current  
0.001  
10  
100  
1000  
10000  
Ibo  
PART NUMBER EXAMPLE  
Normalized VBO Change  
vs Junction Temperature  
Test Circuit Waveforms  
DMM DB3 R  
+8  
+6  
+4  
+2  
0
Packaging  
D28 32 35 40 50  
+V(80)  
V+  
t
R - Tape & Reel  
A -Tape &Ammo  
B - Bulk Packaging  
Series  
0
D60  
V-  
-V(80)  
DM3 for 32 volts.  
DM4 for 40 volts.  
Surface mount.  
Omit for thru hole.  
-2  
-4  
-6  
-8  
+IP  
t
0
-IP  
-40 -20 0 +20 +40 +60 +80 +100 +120 +140  
C3CC03  
RFE International Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail Sales@rfeinc.com  
REV 2001  

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