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DMJ2823-220 PDF预览

DMJ2823-220

更新时间: 2024-01-11 11:51:58
品牌 Logo 应用领域
思佳讯 - SKYWORKS 二极管
页数 文件大小 规格书
22页 170K
描述
Mixer Diode, High Barrier, S Band, Silicon, ROHS COMPLIANT, HERMETIC SEALED, CASE 220, 2 PIN

DMJ2823-220 技术参数

生命周期:Transferred包装说明:S-CDMW-F2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.73
配置:SINGLE最大二极管电容:0.6 pF
二极管元件材料:SILICON二极管类型:MIXER DIODE
频带:S BAND TO C BANDJESD-30 代码:S-CDMW-F2
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:MICROWAVE最大功率耗散:0.075 W
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
肖特基势垒类型:HIGH BARRIERBase Number Matches:1

DMJ2823-220 数据手册

 浏览型号DMJ2823-220的Datasheet PDF文件第2页浏览型号DMJ2823-220的Datasheet PDF文件第3页浏览型号DMJ2823-220的Datasheet PDF文件第4页浏览型号DMJ2823-220的Datasheet PDF文件第5页浏览型号DMJ2823-220的Datasheet PDF文件第6页浏览型号DMJ2823-220的Datasheet PDF文件第7页 
DATA SHEET  
DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer  
Diodes – Singles, Pairs & Quads, Bondable & Packaged Chips  
Applications  
x Microwave Integrated Circuits  
x Mixers  
x Detectors  
Features  
x Low 1/f noise  
x Low intermodulation distortion  
x Epoxy and hermetically sealed packages  
x Statistical Process Control wafer fabrication  
x Packages rated MSL1, 260 qC per JEDEC J-STD-020)  
Beam-lead Schottky barrier diodes are categorized by universal  
mixer applications in four frequency ranges: S, C, X, Ku, K, and Ka  
bands as noted in Table 1. They may also be used as modulators  
and high-speed switches.  
Skyworks offers lead (Pb)-free, RoHS (Restriction of  
Hazardous Substances) compliant packaging.  
Beam-lead diodes are suited for balanced mixers, due to their low  
parasitics and uniformity.  
The absolute maximum ratings of the DME, DMF, and DMJ series  
of Schottky mixer diodes are provided in Table 2. Electrical and  
physical specifications are provided in Tables 3 through 15.  
Description  
Skyworks beam-lead silicon Schottky barrier mixer diodes are  
designed for applications through 40 GHz. The beam-lead design  
reduces the problem of bonding to the very small area  
characteristic of low capacitance junctions.  
Typical performance characteristics are shown in Figures 1  
through 3. Typical mixer circuits are shown in Figure 4.  
Beam-lead Schottky barrier mixer diodes are made by the  
deposition of a suitable barrier metal on an epitaxial silicon  
substrate to form the junction. The process and choice of  
materials result in low series resistance with a narrow spread of  
capacitance values for close impedance control.  
Table 1. Frequency Table  
Frequency  
Frequency Band  
(GHz)  
A variety of forward voltages are available ranging from low values  
for low, or starved, local oscillator drive levels to high values for high  
drive, low distortion mixer applications. Beam-lead diodes are  
available in a wide range of packages. Capacitance ranges and  
series resistances are comparable with the packaged devices that  
are available up to, and including, the Ka-band. Unpackaged diodes  
are well suited for use in Microwave Integrated Circuits (MICs). The  
packaged devices are designed to be inserted as hybrid elements in  
strip, transmission line applications.  
S
C
2 to 4  
4 to 8  
X
8.2 to 12.4  
12.4 to 18.0  
18.0 to 26.5  
26.5 to 40.0  
Ku  
K
Ka  
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com  
200725B • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • October 2, 2009  
1

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