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DMG96404

更新时间： 2024-11-11 20:10:51
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 581K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SSMINI6-F3-B, 6 PIN

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DMG96404 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.75其他特性：BUILT IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-F6元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN AND PNP最大功率耗散 (Abs)：0.125 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

DMG96404 数据手册

 浏览型号DMG96404的Datasheet PDF文件第2页浏览型号DMG96404的Datasheet PDF文件第3页浏览型号DMG96404的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMG96404  
Silicon NPN epitaxial planar type (Tr1)  
Silicon PNP epitaxial planar type (Tr2)  
For digital circuits  
DMG56404 in SSMini6 type package  
Features  
ꢀPackage  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
ꢀCode  
SSMini6-F3-B  
Package dimension clicks here.→  
Click!  
ꢀBasic Part Number  
ꢀPin Name  
DRC2114Y + DRA2114Y (Individual)  
1: Emitter (Tr1)  
2: Base (Tr1)  
4: Emitter (Tr2)  
5: Base (Tr2)  
6: Collector (Tr1)  
Packaging  
3: Collector (Tr2)  
DMG964040R Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)  
ꢀMarking Symbol: J5  
ꢀInternal Connection  
ꢀAbsolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Tr1 Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
Unit  
V
(C1) (B2) (E2)  
6
5
4
50  
V
R1  
R2  
100  
mA  
V
Tr1  
Collector-base voltage (Emitter open)  
Tr2 Collector-emitter voltage (Base open)  
Collector current  
VCBO  
VCEO  
IC  
–50  
Tr2  
3
R2  
R1  
–50  
V
1
2
–100  
125  
mA  
mW  
°C  
°C  
(E1) (B1) (C2)  
Total power dissipation  
PT  
R1  
10  
47  
10  
47  
Tr1  
R2  
kΩ  
kΩ  
Overall Junction temperature  
Storage temperature  
Tj  
150  
Resistance  
value  
R1  
T
stg  
–55 to +150  
Tr2  
R2  
ꢀElectrical Characteristics T = 25°C±3°C  
a
ꢀTr1  
Parameter  
Symbol  
Conditions  
Min  
50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = 10 µA, IE = 0  
VCEO IC = 2 mA, IB = 0  
V
V
50  
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
0.1  
0.5  
0.2  
µA  
µA  
mA  
V
VCE = 10 V, IC = 5 mA  
80  
VCE(sat) IC = 10 mA, IB = 0.5 mA  
VI(on) VCE = 0.2 V, IC = 5 mA  
0.25  
1.7  
V
Input voltage (OFF)  
VI(off) VCE = 5 V, IC = 100 µA  
0.5  
+30%  
0.25  
V
Input resistance  
R1  
–30%  
0.17  
10  
kΩ  
Resistance ratio  
R1 / R2  
0.21  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: January 2012  
Ver. DED  
1
1234

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