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DME914C1 PDF预览

DME914C1

更新时间: 2024-09-10 21:16:31
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
5页 599K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI6-F3-B, 6 PIN

DME914C1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.78其他特性:BUILT-IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.125 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DME914C1 数据手册

 浏览型号DME914C1的Datasheet PDF文件第2页浏览型号DME914C1的Datasheet PDF文件第3页浏览型号DME914C1的Datasheet PDF文件第4页浏览型号DME914C1的Datasheet PDF文件第5页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DME914C1  
Silicon PNP epitaxial planar type (Tr1)  
Silicon NPN epitaxial planar type (Tr2)  
For digital circuits  
Features  
High forward current transfer ratio hFE  
Package  
Code  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
SSMini6-F3-B  
Package dimension clicks here.→  
Click!  
Pin Name  
Basic Part Number  
1: Emitter (Tr1)  
2: Base (Tr1)  
4: Emitter (Tr2)  
5: Base (Tr2)  
6: Collector (Tr1)  
DSA9402 + DRA2143Z (Individual)  
3: Collector (Tr2)  
Packaging  
DME914C10R Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)  
Marking Symbol: T5  
Internal Connection  
Absolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Tr1 Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–15  
Unit  
V
(C1) (B2) (E2)  
6
5
4
R1  
R2  
–12  
V
Tr1  
Tr2  
3
–5  
V
–500  
–1  
mA  
A
1
2
Peak collector current  
ICP  
(E1) (B1) (C2)  
Collector-base voltage (Emitter open)  
Tr2 Collector-emitter voltage (Base open)  
Collector current  
VCBO  
VCEO  
IC  
50  
V
Resistance  
value  
R1  
4.7  
47  
Tr2  
R2  
kΩ  
50  
V
100  
mA  
mW  
°C  
°C  
Total power dissipation  
PT  
125  
Overall Junction temperature  
Storage temperature  
Tj  
150  
T
stg  
–55 to +150  
Publication date: January 2012  
Ver. BED  
1

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