Datasheet > DME500

DME500

更新时间： 2024-11-20 21:55:51

品牌	Logo	应用领域
威讯 - RFMD		脉冲
页数	文件大小	规格书
3页	254K
描述
500 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz

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DME500 数据手册

DME 500

500 Watts, 50 Volts, Pulsed

Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION

CASE OUTLINE

55KT, STYLE 1

The DME 500 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 1025-1150 MHz. The

device has gold thin-film metallization for proven highest MTTF. The

transistor includes input and output prematch for broadband capability. Low

thermal resistance package reduces junction temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25^oC²

1700 Watts

Maximum Voltage and Current

BVces

BVebo Emitter to Base Voltage

Ic Collector Current

Collector to Base Voltage

55 Volts

3.5 Volts

40 Amps

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 200^oC

+ 200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX UNITS

Pout

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 1025-1150 MHz

Vcc = 50 Volts

PW = 10 µsec

DF = 1%

500

6.0

Watts

125

6.5

10:1

VSWR

F = 1090 MHz

BVebo

BVces

h_FE

Emitter to Base Breakdown

Collector to Emitter Breakdown

DC - Current Gain

Ie = 30 mA

Ic = 40 mA

Ic = 500 mA, Vce = 5 V

3.5

Volts

100

0.1

^oC/W

jc²

Thermal Resistance

Note 1: At rated output power and pulse conditions

2: At rated pulse conditions

Initial Issue June, 1994

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

12 3

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