Datasheet > DME375A

DME375A

更新时间： 2024-09-28 20:15:55

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
4页	343K
描述
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 55AW, 2 PIN

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DME375A 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code：	unknown	风险等级：	5.59
Is Samacsys：	N	最大集电极电流 (IC)：	30 A
配置：	SINGLE	最高频带：	L BAND
JESD-30 代码：	R-CDFM-F2	元件数量：	1
端子数量：	2	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

DME375A 数据手册

R.A.063099

DME375A

375 Watts, 50 Volts, Pulsed

Avionics 1025-1150 MHz

GENERAL DESCRIPTION

CASE OUTLINE

55AW Style 1

The DME375A is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 1025-1150 MHz. The device

has gold thin-film metallization for proven highest MTTF. The transistor

includes input and output prematch for broadband capability. Low thermal

resistance package reduces junction temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @25!C²

875 W

Maximum Voltage and Current

Collector to Base Voltage (BV_ces)

55 V

4.0 V

30 A

Emitter to Base Voltage (BV_ebo

)

Collector Current (I_c)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

-65 to +200 !C

+200 !C

ELECTRICAL CHARACTERISTICS @ 25!C

SYMBOL CHARACTERISTICS

TEST CONDITIONS

MIN TYP MAX UNITS

P_out

P_in

P_g

Power Out

= 1025 – 1150 MHz

375

Power Input

Vcc = 50 Volts

PW = 10 #sec

DF = 1%

Power Gain

6.5

Collector Efficiency

Load Mismatch Tolerance

VSWR¹

F = 1090 MHz

!^:1

FUNCTIONAL CHARACTERISTICS @ 25!C

BV_ebo

BV_ces

h_FE

$jc²

Emitter to Base Breakdown

Ie = 20 mA

4.0

Collector to Emitter Breakdown Ic = 25 mA

DC – Current Gain

Thermal Resistance

Vce = 5V, Ic = 300 mA

0.2

!C/W

NOTE 1: At rated output power and pulse conditions

2. At rated pulse conditions

Initial Issue June 1994

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE

WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

12 3 4

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