Datasheet > DMA502010

DMA502010

更新时间： 2024-11-10 01:24:07

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
5页	749K
描述
Silicon PNP epitaxial planar type

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DMA502010 数据手册

DMA50201

Silicon PNP epitaxial planar type

Unit: mm

For general ampliﬁcation

DMA20201 in SMini5 type package

 Features

 High forward current transfer ratio h_FEwith excellent linearity

 Low collector-emitter saturation voltage V_CE(sat)

 Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

ꢀMarking Symbol: A5

ꢀBasic Part Number

Dual DSA2001 (Common Base)

1: Emitter (Tr1)

2: Base (Common)

3: Emitter (Tr2)

Panasonic

4: Collector (Tr2)

 Packaging

5: Collector (Tr1)

DMA502010R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

SMini5-F3-B

SC-113CB

SOT-353

ꢀAbsolute Maximum Ratings T_a= 25°C

JEITA

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

–60

Unit

Code

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

(C1)

(C2)

–50

Tr1

Tr2

–7

–100

°C

Tr1

Tr2

Peak collector current

I_CP

–200

Total power dissipation

P_T

150

(E1) (B) (E2)

Junction temperature

T_j

150

Overall

Operating ambient temperature

Storage temperature

T_opr

–40 to +85

–55 to +150

°C

stg

°C

ꢀElectrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

Conditions

Min

–60

–50

–7

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

V_CBOI_C= –10 µA, I_E= 0

V_CEOI_C= –2 mA, I_B= 0

V_EBOI_E= –10 µA, I_C= 0

I_CBO

I_CEO

h_FE

V_CB= –20 V, I_E= 0

V_CE= –10 V, I_B= 0

V_CE= –10 V, I_C= –2 mA

– 0.1

–100

460

µA



210

h_FE

(Small/Large)

_FEratio ^*

V_CE= –10 V, I_C= –2 mA

0.50

0.99



Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= –100 mA, I_B= –10 mA

– 0.2

150

– 0.5

f_T

V_CE= –10 V, I_C= –2 mA

MHz

Collector output capacitance

C_ob

V_CB= –10 V, I_E= 0, f = 1 MHz

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Ratio between 2 elements

Publication date: December 2013

Ver. DED

12 3 4 5

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与DMA502010相关器件

型号	品牌	获取价格	描述	数据表
DMA502010R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, HALOGEN
DMA50401	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), PNP, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F
DMA50601	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), PNP, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F
DMA506E1	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 2-Element, PNP, Silicon, HALOGE
DMA506E10R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 2-Element, PNP, Silicon, HALOGE
DMA5091	SKYWORKS	获取价格	Mixer Diode, 500ohm Z(V) Max, 7dB Noise Figure, Silicon
DMA5091-000	SKYWORKS	获取价格	Mixer Diode, 500ohm Z(V) Max, 7dB Noise Figure, Silicon
DMA5091-001	SKYWORKS	获取价格	Mixer Diode, 500ohm Z(V) Max, 7dB Noise Figure, Silicon
DMA5091-006	SKYWORKS	获取价格	Mixer Diode, 500ohm Z(V) Max, 6.5dB Noise Figure, Silicon
DMA5091A	SKYWORKS	获取价格	Mixer Diode, 500ohm Z(V) Max, 6.5dB Noise Figure, Silicon

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