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DM74LS10N PDF预览

DM74LS10N

更新时间: 2024-11-17 23:00:43
品牌 Logo 应用领域
美国国家半导体 - NSC
页数 文件大小 规格书
6页 123K
描述
Triple 3-Input NAND Gates

DM74LS10N 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:PLASTIC, DIP-14Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.59
系列:LSJESD-30 代码:R-PDIP-T14
JESD-609代码:e0长度:19.18 mm
负载电容(CL):15 pF逻辑集成电路类型:NAND GATE
最大I(ol):0.008 A功能数量:3
输入次数:3端子数量:14
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP14,.3封装形状:RECTANGULAR
封装形式:IN-LINE电源:5 V
最大电源电流(ICC):3.3 mAProp。Delay @ Nom-Sup:15 ns
传播延迟(tpd):15 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:5.08 mm
子类别:Gates最大供电电压 (Vsup):5.25 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:TTL
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL宽度:7.62 mm
Base Number Matches:1

DM74LS10N 数据手册

 浏览型号DM74LS10N的Datasheet PDF文件第2页浏览型号DM74LS10N的Datasheet PDF文件第3页浏览型号DM74LS10N的Datasheet PDF文件第4页浏览型号DM74LS10N的Datasheet PDF文件第5页浏览型号DM74LS10N的Datasheet PDF文件第6页 
June 1989  
54LS10/DM54LS10/DM74LS10  
Triple 3-Input NAND Gates  
General Description  
This device contains three independent gates each of which  
performs the logic NAND function.  
Features  
Y
Alternate Military/Aerospace device (54LS10) is avail-  
able. Contact a National Semiconductor Sales Office/  
Distributor for specifications.  
Connection Diagram  
Dual-In-Line Package  
TL/F/6349–1  
Order Number 54LS10DMQB, 54LS10FMQB, 54LS10LMQB,  
DM54LS10J, DM54LS10W, DM74LS10M or DM74LS10N  
See NS Package Number E20A, J14A, M14A, N14A or W14B  
Function Table  
e
Y
Inputs  
B
ABC  
C
Output  
Y
A
X
X
L
X
L
L
X
X
H
H
H
H
L
X
H
H
e
e
e
H
L
High Logic Level  
Low Logic Level  
X
Either Low or High Logic Level  
C
1995 National Semiconductor Corporation  
TL/F/6349  
RRD-B30M105/Printed in U. S. A.  

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