DLSS12 THRU DLSS110
SURFACE MOUNT SCHOTTKY
REVERSE VOLTAGE: 20 --- 100 V
CURRENT: 1.0 A
FEATURES
Plastic package has Underwriters Laborator
FlammabilityClassification 94V-0
For surface mounted applications
Low profile package
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DO - 213AB
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111
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Built-in strain relief
Metal silicon junction, majoritycarrier conduction
SOLDERABLE ENDS
+0
-0.20
High surge capability
D2=D1
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High current capability,low forward voltage drop
Low power loss,high effciency
For use in low voltage high frequencyinverters,free
111 wheeling and polarityprotection applications
D2
Guardring for overvoltage protection
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o
High temperature soldering guaranteed:250 C/10
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1
11 seconds at terminals
0.5± 0.1
0.5± 0.1
4.9± 0.2
MECHANICAL DATA
C a s e :JE D E C D O -21 3AB ,m o lded p la s tic o ver
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1 11 1 pa ss iva ted chip
T e rm inal s :S o lder P la ted, s olde rable per M IL -S T D -750,
e t
1 11 1 M h od 2026
Dimensions in millimeters
P o la rity: C o lor band d e no tes ca thode end
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W eigh t: 0.0046 ounces, 0.116 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified
UNITS
DLSS12 DLSS13 DLSS14 DLSS16 DLSS18 DLSS110
MDD Catalog
Number
Maximumrecurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRWS
VDC
20
14
20
30
21
30
40
28
40
60
42
60
80
63
80
100
70
V
V
V
MaximumDC blocking voltage
100
Maximumaverage forw ord rectified current at
1.0
I(AV)
IFSM
VF
A
A
V
c
TL(SEEFIG.1) (NOTE2)
Peak forw ard surge current 8.3ms single half-
c sine-w ave superimposed on rated load(JEDEC
c Method)
30
Maximuminstantaneous forw ard voltage at
0.5
0.7
0.79
v 1.0A(NOTE.1)
MaximumDC reverse current @TA=25oC
0.5
IR
mA
at rated DC blocking voltage(NOTE1) @TA=100oC
5.0
45
15
Rθ
JA
Typical thermal resitance (NOTE2)
K/W
Rθ
JL
oC
oC
Operating junction and storagetemperature range
Storage temperature range
TSTG
TJ
-55--- +150
-55--- +150
NOTE: 1.Pulse test:300 S pulse width,1%duty cycle
μ
2
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm )copper pad areas
MDD ELECTRONIC