Datasheet > DK48N75

DK48N75

更新时间： 2022-03-20 11:37:49

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
5页	727K
描述
70V,68A N-Channel Trench Process Power MOSFET

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DK48N75 数据手册

DK48N75

Pb Free Plating Product

70V,68A N-Channel Trench Process Power MOSFET

General Description

The

is N-channel MOS Field Effect Transistor

DK48N75

designed for high current switching applications. Rugged EAS

capability and ultra low R_DS(ON)is suitable for PWM, load

switching especially for E-Bike controller applications.

(TO-220 HeatSink)

Features

● V_DS=70V；I_D=68A@ V_GS=10V；

R_DS(ON)<8.4mΩ @ V_GS=10V

● Special Designed for E-Bike Controller Application

● Ultra Low On-Resistance

Schematic Diagram

● High UIS and UIS 100% Test

Application

V_DS= 70 V

I_D= 68A

● 48V E-Bike Controller Applications

● Hard Switched and High Frequency Circuits

● Uninterruptible Power Supply

R_DS(ON)= 7mΩ

Table 1. Absolute Maximum Ratings (TA=25℃)

Symbol

Parameter

Value

Unit

±25

VDS

Drain-Source Voltage (VGS=0V)

VGS

Gate-Source Voltage (VDS=0V)

Drain Current (DC) at Tc=25℃

Drain Current (DC) at Tc=100℃

I_{D (DC)}

I_{DM (pluse)}

dv/dt

P_D

47.6

272

(Note 1)

Drain Current-Continuous@ Current-Pulsed

Peak Diode Recovery Voltage

Maximum Power Dissipation(Tc=25℃)

Derating Factor

V/ns

0.57

342

W/℃

℃

Single Pulse Avalanche Energy ^{(Note 2)}

EAS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature

2.EAS condition:T =25℃,VDD=33V,VG=10V,I_D=37A

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