5秒后页面跳转
BR100-03 PDF预览

BR100-03

更新时间: 2024-02-05 12:01:17
品牌 Logo 应用领域
德欧泰克 - DIOTEC 触发装置二极管IOT
页数 文件大小 规格书
2页 90K
描述
Bidirectional Si-Trigger-Diodes

BR100-03 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:DO-213AA包装说明:LONG FORM, O-PELF-R2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.14Is Samacsys:N
最大转折电压:36 V最小转折电压:28 V
外壳连接:ISOLATED配置:SINGLE
JEDEC-95代码:DO-213AAJESD-30 代码:O-PELF-R2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:100 °C最低工作温度:-50 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
认证状态:Not Qualified重复峰值反向电压:4 V
子类别:DIACs表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:DIACBase Number Matches:1

BR100-03 数据手册

 浏览型号BR100-03的Datasheet PDF文件第2页 
BR100-03 ... BR100-04  
Version 2006-04-27  
BR100-03 ... BR100-04  
Bidirectional Si-Trigger-Diodes (DIAC)  
Bidirektionale Si-Triggerdioden (DIAC)  
Breakover voltage  
Durchbruchspannung  
28 ... 45 V  
± 2 A  
Ø 2.6-0.1  
Peak pulse current  
Max. Triggerimpuls  
Plastic case  
Kunststoffgehäuse  
DO-41  
DO-204AL  
Weight approx. – Gewicht ca.  
0.4 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Ø 0.8±0.05  
Standard packaging taped in ammo pack  
Standard Lieferform gegurtet in Ammo-Pack  
Dimensions - Maße [mm]  
Maximum ratings  
Grenzwerte  
Power dissipation  
Verlustleistung  
TA = 50°C  
Ptot  
IPM  
150 mW 1)  
Peak pulse current (120 Hz pulse repetition rate)  
Max. Triggerstrom (120 Hz Puls-Wiederholrate)  
tp 20 µs  
± 2 A 1)  
Operating Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+100°C  
-50...+175°C  
Characteristics  
Kennwerte  
Breakover voltage  
Durchbruchspannung  
dV/dt = 10 V/µs  
BR100-03  
BR100-031  
BR100-04  
VBO  
VBO  
VBO  
28 ... 36 V  
30 ... 34 V  
35 ... 45 V  
Breakover current – Durchbruchstrom  
V = 98% VBO  
|V(BO)F – V(BO)R  
IBO  
< 50 µA  
< 3.8 V  
Asymmetry of breakover voltage  
|
ΔVBO  
Unsymmetrie der Durchbruchspannung  
Foldback voltage – Spannungs-Rücksprung  
ΔI = IBO to/auf IF = 10 mA  
dV/dt = 10 V/µs  
ΔVF/R  
RthA  
> 5 V  
< 45 K/W 1)  
< 15 K/W  
Thermal resistance junction to ambient air  
Wärmewiderstand Sperrschicht – umgebende Luft  
Thermal resistance junction to leads  
RthL  
Wärmewiderstand Sperrschicht Anschlussdraht  
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case  
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1

与BR100-03相关器件

型号 品牌 描述 获取价格 数据表
BR100-031 ETC

获取价格

BR100-031L ETC Replacement with:TMMDB3TG

获取价格

BR100-03LL ETC Replacement with:TMMDB3

获取价格

BR100-03LLD DIOTEC Surface Mount Bidirectional Si-Trigger-Diodes

获取价格

BR100-04 DIOTEC Bidirectional Si-Trigger-Diodes

获取价格

BR100-04LL ETC

获取价格