BAV70DW

更新时间： 2024-02-02 11:06:50

品牌	Logo	应用领域
美台 - DIODES		二极管开关光电二极管
页数	文件大小	规格书
3页	64K
描述
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY

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技术参数
数据手册

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BAV70DW 技术参数

生命周期：	Active	零件包装代码：	SC-70
针数：	3	Reach Compliance Code：	compliant
风险等级：	5.69	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

BAV70DW 数据手册

BAV70DW

QUAD SURFACE MOUNT SWITCHING DIODE ARRAY

Features

Fast Switching Speed

SOT-363

Ultra-Small Surface Mount Package

For General Purpose Switching Applications

High Conductance

Dim

Min

0.10

1.15

2.00

Max

0.30

1.35

2.20

Two “BAV70” Circuits In One Package

0.65 Nominal

Mechanical Data

0.30

1.80

0.40

2.20

0.10

1.00

0.40

0.25

8°

Case: SOT-363, Molded Plastic

Case Material - UL Flammability Rating

Classification 94V-0

Moisture sensitivity: Level 1 per J-STD-020A

Terminals: Solderable per MIL-STD-202,

Method 208

Orientation: See Diagram

Marking: KJA (see page 3)

Weight: 0.006 grams (approx.)

0.90

0.25

0.10

0°

A₂

C₁

C₂

A₁

All Dimensions in mm

TOP VIEW

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

Value

Unit

V_RM

Non-Repetitive Peak Reverse Voltage

100

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_FM

RMS Reverse Voltage

Forward Continuous Current (Note 1)

Average Rectified Output Current (Note 1)

300

150

I_O

Non-Repetitive Peak Forward Surge Current @ t = 1.0ms

2.0

1.0

I_FSM

@ t = 1.0s

P_d

Power Dissipation (Note 1)

200

625

°C/W

°C

R_qJA

Thermal Resistance Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

T_j, T_STG

-65 to +150

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Symbol

Min

Max

Unit

Test Condition

V_(BR)R

Reverse Breakdown Voltage (Note 2)

I_F= 2.5mA

I_F= 1.0mA

I_F= 10mA

I_F= 50mA

I_F= 150mA

0.715

0.855

1.0

V_F

Forward Voltage (Note 2)

Reverse Current (Note 2)

1.25

_R= 75V

2.5

_R= 75V, T_j= 150°C

I_R

V_R= 25V, T_j= 150°C

V_R= 20V

V_R= 0, f = 1.0MHz

C_T

t_rr

Total Capacitance

2.0

4.0

I_F= I_R= 10mA,

I_rr= 0.1 x I_R, R_L= 100W

Reverse Recovery Time

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

DS30132 Rev. 4 - 2

1 of 3

BAV70DW

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