2N7002W

更新时间： 2024-01-08 09:50:40

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
3页	72K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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技术参数
数据手册

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2N7002W 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002W 数据手册

2N7002W

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Ultra-Small Surface Mount Package

SOT-323

Dim

Min

0.30

1.15

2.00

Max

0.40

1.35

2.20

TOP VIEW

0.65 Nominal

0.30

1.20

1.80

0.0

0.40

1.40

2.20

0.10

1.00

0.40

0.25

Mechanical Data

Case: SOT-323, Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

0.90

0.25

0.10

Terminal Connections: See Diagram

Marking: K72

Weight: 0.006 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Drain-Source Voltage

Symbol

2N7002W

Units

V_DSS

V_DGR

Drain-Gate Voltage R_GS£ 1.0MW

Gate-Source Voltage

Continuous

Pulsed

V_GSS

115

800

Drain Current (Note 1)

Continuous

Continuous @ 100°C

Pulsed

I_D

Total Power Dissipation (Note 1)

Derating above T_A= 25°C

200

1.60

mW/°C

P_d

R_qJA

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

625

K/W

°C

T_j, T_STG

-55 to +150

Note: 1. Valid provided that terminals are kept at specified ambient temperature.

2. Pulse width £ 300ms, duty cycle £ 2%.

DS30099 Rev. 4P-1

1 of 3

2N7002W

12 3

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