是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 0.63 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 0.115 A | 最大漏极电流 (ID): | 0.115 A |
最大漏源导通电阻: | 7.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 5 pF | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.2 W |
认证状态: | Not Qualified | 参考标准: | AEC-Q101 |
子类别: | FET General Purpose Powers | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N7002W-G | COMCHIP | MOSFET |
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2N7002WG-AL3-R | UTC | 300mA, 60V N-CHANNEL POWER MOSFET |
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2N7002WL-AL3-R | UTC | 300mA, 60V N-CHANNEL POWER MOSFET |
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2N7002WT1 | WILLAS | Small Signal MOSFET 115 mA, 60 V |
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2N7002WT1G | ONSEMI | Small Signal MOSFET 60 V, 340 mA, Single, N−Channel, SC−70 |
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2N7002WT3G | ONSEMI | 310mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 419-04, SC-70, 3 PIN |
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