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2N7002T-7 PDF预览

2N7002T-7

更新时间： 2024-02-23 17:11:51
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
5页 112K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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2N7002T-7 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：15 weeks
风险等级：0.93其他特性：HIGH RELIABILITY
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：0.115 A最大漏极电流 (ID)：0.115 A
最大漏源导通电阻：13.5 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：5 pFJESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.15 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2N7002T-7 数据手册

 浏览型号2N7002T-7的Datasheet PDF文件第2页浏览型号2N7002T-7的Datasheet PDF文件第3页浏览型号2N7002T-7的Datasheet PDF文件第4页浏览型号2N7002T-7的Datasheet PDF文件第5页 
2N7002T  
N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features  
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•
•
•
•
•
•
•
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Low On-Resistance  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
ID  
V(BR)DSS  
RDS(ON)  
TA = 25°C  
Low Input/Output Leakage  
60V  
115mA  
7.5Ω @ VGS = 5V  
Ultra-Small Surface Mount Package  
Totally Lead Free, Full RoHS Compliant (Note 1)  
Halogen and Antimony Free. "Green" Device (Notes 2 and 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Description and Applications  
This new generation MOSFET has been designed to minimize the on-  
state resistance (RDS(on)) and yet maintain superior switching  
performance, making it ideal for high efficiency power management  
applications.  
Mechanical Data  
•
•
Case: SOT523  
Case Material: Molded Plastic. “Green” Molding Compound. UL  
Flammability Classification Rating 94V-0  
•
•
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Weight: 0.002 grams (approximate)  
•
•
•
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DC-DC Converters  
Power management functions  
Battery Operated Systems and Solid-State Relays  
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,  
Memories, Transistors, etc  
•
•
Drain  
SOT523  
D
Gate  
G
S
Source  
Top View  
Top View  
Equivalent Circuit  
Ordering Information (Note 4)  
Part Number  
2N7002T-7-F  
2N7002T-13-F  
2N7002TQ-7-F  
2N7002TQ-13-F  
Qualification  
Case  
Packaging  
Commercial  
Commercial  
Automotive  
Automotive  
SOT523  
SOT523  
SOT523  
SOT523  
3,000/Tape & Reel  
10,000/Tape & Reel  
3,000/Tape & Reel  
10,000/Tape & Reel  
Notes:  
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free  
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
3. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants  
4. For packaging details, go to our website at http://www.diodes.com.  
Marking Information  
72 = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: T = 2006)  
72  
YM  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2005  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
S
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 5  
www.diodes.com  
April 2012  
© Diodes Incorporated  
2N7002T  
Document number: DS30301 Rev. 14 - 2  
12345

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