SPICE MODEL: 2N7002E
2N7002E
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
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Low On-Resistance: RDS(ON)
SOT-23
Low Gate Threshold Voltage
Low Input Capacitance
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
A
Fast Switching Speed
D
B
Low Input/Output Leakage
Lead Free/RoHS Compliant (Note 2)
B
C
C
D
TOP VIEW
G
S
D
E
E
Mechanical Data
G
G
H
H
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Case: SOT-23
K
Case Material: UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed
over Alloy 42 leadframe).
M
J
J
L
K
L
M
Terminal Connections: See Diagram
Marking (See Page 2): K7B
a
All Dimensions in mm
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
@ TA = 25°C unless otherwise specified
Symbol
Maximum Ratings
Characteristic
Value
60
Units
VDSS
VDGR
V
V
Drain-Source Voltage
60
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Continuous
Pulsed
±20
±40
VGSS
V
ID
mA
mW
°C/W
°C
Drain Current
Continuous
240
300
Pd
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
R
qJA
417
Tj, TSTG
-55 to +150
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30376 Rev. 5 - 2
1 of 4
2N7002E
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ã Diodes Incorporated