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2N7002_ PDF预览

2N7002_

更新时间: 2024-02-27 07:11:15
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 229K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002_ 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.55Is Samacsys:N
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

2N7002_ 数据手册

 浏览型号2N7002_的Datasheet PDF文件第2页浏览型号2N7002_的Datasheet PDF文件第3页浏览型号2N7002_的Datasheet PDF文件第4页 
SPICE MODEL: 2N7002  
2N7002  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT  
TRANSISTOR  
Features  
·
·
·
·
·
·
·
Low On-Resistance: RDS(ON)  
Low Gate Threshold Voltage  
SOT-23  
Low Input Capacitance  
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
A
Fast Switching Speed  
D
Low Input/Output Leakage  
B
B
C
Lead Free/RoHS Compliant (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
C
TOP VIEW  
G
S
D
D
G
E
E
H
Mechanical Data  
·
·
G
H
K
Case: SOT-23  
M
J
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
J
L
K
·
·
·
Moisture sensitivity: Level 1 per J-STD-020C  
L
Terminals: Solderable per MIL-STD-202, Method 208  
Drain  
M
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
a
·
·
·
·
Terminal Connections: See Diagram  
Marking: K72, K7A, K7B (See Page 2)  
Ordering & Date Code Information: See Page 2  
Weight: 0.008 grams (approximate)  
All Dimensions in mm  
Gate  
Source  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VDSS  
Value  
60  
Units  
V
V
Drain-Source Voltage  
VDGR  
60  
Drain-Gate Voltage RGS £ 1.0MW  
Gate-Source Voltage  
Continuous  
Pulsed  
±20  
±40  
VGSS  
V
115  
73  
800  
Drain Current (Note 1)  
Continuous  
Continuous @ 100°C  
Pulsed  
ID  
mA  
Total Power Dissipation (Note 1)  
Derating above TA = 25°C  
300  
2.4  
mW  
mW/°C  
Pd  
RqJA  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
417  
°C/W  
°C  
Tj, TSTG  
-55 to +150  
Note:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
DS11303 Rev. 19- 2  
1 of 4  
2N7002  
www.diodes.com  
ã Diodes Incorporated  

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