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2DD1621T-13 PDF预览

2DD1621T-13

更新时间: 2024-02-03 13:00:19
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关
页数 文件大小 规格书
4页 207K
描述
NPN SURFACE MOUNT TRANSISTOR

2DD1621T-13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:19 weeks
风险等级:1.75外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):65
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

2DD1621T-13 数据手册

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2DD1621T  
NPN SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Epitaxial Planar Die Construction  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT89-3L  
Mechanical Data  
TOR  
LLEC  
2,4  
CO  
Case: SOT89-3L  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
3 E  
2 C  
1 B  
C 4  
T
1
ASE  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
B
3
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.072 grams (approximate)  
EMITTER  
EW  
VI  
OP  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
30  
25  
6.0  
2.0  
Unit  
V
V
V
A
Collector Current  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
1
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
PD  
125  
°C/W  
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C  
Operating and Storage Temperature Range  
Rθ  
JA  
-55 to +150  
°C  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
C = 10μA, IE = 0  
30  
25  
6.0  
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
I
I
I
C = 1mA, IB = 0  
V
C = 10μA, IC = 0  
100  
nA  
nA  
V
CB = 20V, IE = 0  
Emitter-Base Cutoff Current  
100  
IEBO  
VEB = 4.0V, IC = 0  
ON CHARACTERISTICS (Note 4)  
400  
200  
65  
VCE = 2.0V, IC = 0.1A  
DC Current Gain  
hFE  
V
CE = 2.0V, IC = 1.5A  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
0.12  
0.9  
0.4  
1.2  
V
V
VCE(SAT)  
VBE(SAT)  
IC = 1.5A, IB = 75mA  
IC = 1.5A, IB = 75mA  
SMALL SIGNAL CHARACTERISTICS  
VCE = 10V, IC = 50mA,  
f = 100MHz  
VCB = 10V, IE = 0, f = 1MHz  
Current Gain-Bandwidth Product  
300  
16  
MHz  
pF  
fT  
Output Capacitance  
SWITCHING CHARACTERISTICS  
Turn On Time  
Cobo  
70  
170  
25  
ns  
ns  
ns  
ton  
tstg  
tf  
VCE = 12V, VBE = 5V,  
IB1 = IB2 = 25mA, IC = 500mA  
Storage Time  
Fall Time  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.  
DS31240 Rev. 2 - 2  
1 of 4  
www.diodes.com  
2DD1621T  
© Diodes Incorporated  

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