是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.73 | 最大集电极电流 (IC): | 500 A |
集电极-发射极最大电压: | 3300 V | 门极-发射极最大电压: | 20 V |
元件数量: | 2 | 最高工作温度: | 150 °C |
最大功率耗散 (Abs): | 5200 W | 子类别: | Insulated Gate BIP Transistors |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DIM50CHS12-E | ETC |
获取价格 |
IGBT Modules - Half Bridge | |
DIM50CHS17-E | ETC |
获取价格 |
IGBT Modules - Half Bridge | |
DIM50HST12 | DYNEX |
获取价格 |
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel | |
DIM50HST12-B000 | DYNEX |
获取价格 |
Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, ECOPAC-10 | |
DIM600BBS17-A000 | DYNEX |
获取价格 |
Insulated Gate Bipolar Transistor | |
DIM600BSS12-A | ETC |
获取价格 |
IGBT Modules - Single Switch | |
DIM600BSS12-A000 | DYNEX |
获取价格 |
Single Switch IGBT Module | |
DIM600BSS12-E000 | DYNEX |
获取价格 |
Single Switch IGBT Module | |
DIM600BSS17-A000 | DYNEX |
获取价格 |
Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel, B, MODULE-5 | |
DIM600BSS17-E | ETC |
获取价格 |
IGBT Modules - Single Switch |