DIONICS, INC.
Phone: (516) 997-7474
65 Rushmore Street
Westbury, NY 11590
Fax: (516) 997-7479
Website: www.dionics-usa.com
DIG-11-8-30-DD
DIG-12-8-30-DD
DIG-22-8-30-DD
Photovoltaic MOSFET Drivers With Dynamic Discharge*
*US Patent 4,931,656
Features:
Applications:
Ø Fast Turn Off, Active Gate Discharge
Ø Dielectrically Isolated
Ø Gate Drive For MOS devices
Ø Gate Drive For SCR
Ø Logic Circuit Compatibility
Ø High Open Circuit Voltage
Ø High Operating Temperature
Ø Fast Response Time
Ø Solid-State Relays
Ø Interface Between Logic Circuits & External Loads
Ø A.T.E. (Automatic Test Equipment)
Ø Switching Equipment
Ø High Isolation Resistance
Ø Excellent Input/Output Linearity
Ø Self Limiting Gate Voltage
Ø Isolation Amplifiers
Ø Load Control From Microprocessor I/O Ports
Ø Thermocouple Open Detectors
Description:
The photovoltaic MOSFET-driver is a State-of- the-Art, optically coupled floating power source used primarily to control
MOSFETs or IGBTs when electrical isolation between input and output is required.
In addition to the infrared LED and photovoltaic (PV) diode array, each of the DD (Dynamic Discharge) products
contains circuitry that rapidly discharges the power MOSFET gate when the LED is deactivated. The unique rapid
discharge features of the photovoltaic MOSFET-drivers make them particularly useful for high-side switching of N-
channel MOSFETs in solid-state relays, DC motor control and switching regulator applications.
The typical input circuit to the LED is a limiting resistor connected in series with the LED. When activated, the LED
emits infrared light towards the photovoltaic diode array, which then responds by generating an open circuit voltage (Voc),
thus disabling the turn-off circuitry. The self-limiting photovoltaic output of the diode array is floating and therefore, can
be safely applied directly to the gate and source of a MOSFET, regardless of the source potential of the MOSFET. When
the LED is deactivated, the active turn-off circuit discharges the capacitive input of the MOSFET. The active turn-off
circuitry is designed such that the turn-off time of the MOSFET is relatively independent of the input capacitance of the
MOSFET over a range of 50 to 5000 pF. Standard packages include low cost plastic mini-dips and hermetic 8-pin DIP
ceramic side brazed.
v Package Layout:
Pin Designation
Pin
Part Number
0.380
0.380
Number
11-8-30-DD 12-8-30-DD 22-8-30-DD
1
2
3
4
5
6
7
8
Input +
Input -
Input +
Input -
Input 1+
Input 1-
DIG-11
8-30-DD
xxxx
DIG-12
8-30-DD
xxxx
Not Connected Not Connected
Not Connected Not Connected
Not Connected Output1+
Input 2+
Input 2-
0.020
0.020
Output1+
Output1-
Output2+
Output2-
Output +
Not Connected Output2+
Output - Output2-
Output1-
0.025
0.070
0.025
0.070
11/2001