DIONICS, INC.
Phone: (516) 997-7474
Fax: (516) 997-7479
Website: www.dionics-usa.com
65 Rushmore Street
Westbury, NY 11590
DIG-11-15-30-DD MOSFET Drivers With Dynamic Discharge*
*US Patent 4,931,656
Features:
Applications:
Ø Fast Turn Off, Active Gate Discharge
Ø Dielectrically Isolated
Ø Gate Drive For MOS devices
Ø Gate Drive For SCR
Ø Logic Circuit Compatibility
Ø High Open Circuit Voltage Up To 15V
Ø High Operating Temperature
Ø Fast Response Time
Ø Solid-State Relays
Ø Interface Between Logic Circuits & External Loads
Ø A.T.E. (Automatic Test Equipment)
Ø Switching Equipment
Ø High Isolation Resistance
Ø Isolation Amplifiers
Ø Excellent Input/Output Linearity
Ø Self Limiting Gate Voltage
Ø Load Control From Microprocessor I/O Ports
Ø Thermocouple Open Detectors
Description:
The photovoltaic MOSFET driver is a State-of- the-Art, optically coupled floating power source used primarily to control
MOSFETs when electrical isolation between input and output is required.
In addition to the infrared LED and photovoltaic diode array, each of the DD (Dynamic Discharge) products contains
circuitry that rapidly discharges the power MOSFET gate when the LED is deactivated. The unique rapid discharge
features of the photovoltaic MOSFET drivers make them particularly useful for high side switching of N-channel
MOSFETs in solid-state relays, DC motor control and switching regulator applications.
The typical input circuit to the LED is a limiting resistor connected in series with the LED. When activated, the LED
emits infrared light towards the photovoltaic diode array, which then responds by generating an open circuit voltage (Voc)
and disabling the turn off circuitry. The self-limiting photovoltaic output of the diode array is floating and therefore, can
be safely applied directly to the gate and source of a MOSFET, regardless of the source potential of the MOSFET. When
the LED is deactivated, the active turn off circuit discharges the capacitive input of the MOSFET. The active turn off
circuitry is designed such that the turn off time of the MOSFET is relatively independent of the input capacitance of the
MOSFET over a range of 300 to 5000 pF. Standard packages include low cost plastic mini-dips and hermetic 8-pin DIP
ceramic side brazed.
v Equivalent Circuit:
v Package Layout:
Pin Designation
0.380
Pin Number DIG-11-15-30-DD
1
2
3
8
7
6
1
2
3
4
5
6
7
8
Input +
Input -
N.C
LED
PV
DIG-11
15-30-DD
xxxx
T.O
Cir.
0.020
N.C
N.C
Output +
N.C
Output -
0.025
0.070
11/2001