Datasheet > DHG100X600NA

DHG100X600NA

更新时间： 2024-03-25 22:01:49

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
4页	481K
描述
SONIC系列提供改进的反向恢复特性，具有硬关断能力，击穿电压高达1800V。

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DHG100X600NA 数据手册

DHG100X600NA

preliminary

V_RRM

I_FAV

t_rr

600V

50A

Sonic Fast Recovery Diode

= 2x

35ns

High Performance Fast Recovery Diode

Low Loss and Soft Recovery

Parallel legs

Part number

DHG100X600NA

Backside: Isolated

SOT-227B (minibloc)

Features / Advantages:

Applications:

Package:

● Planar passivated chips

● Antiparallel diode for high frequency

switching devices

● Antisaturation diode

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

● Isolation Voltage:

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

● Base plate: Copper

internally DCB isolated

● Advanced power cycling

3000

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Very soft recovery behaviour

● Avalanche voltage rated for reliable

operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

Terms Conditions of usage:

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and

the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The

information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns

the specific application of your product, please contact your local sales office.

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.

Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend

- to perform joint risk and quality assessments;

- the conclusion of quality agreements;

- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20170522b

12 3 4

中文翻译

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与DHG100X600NA相关器件

型号	品牌	获取价格	描述	数据表
DHG10C600PB	IXYS	获取价格	Rectifier Diode, 1 Phase, 2 Element, 5A, 600V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, P
DHG10C600PB	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 2 Element, 5A, 600V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, P
DHG10D40	HITACHI	获取价格	Rectifier Diode, 1 Element, 0.01A, 4000V V(RRM), Silicon, GLASS PACKAGE-2
DHG10I1200PA	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT,
DHG10I1200PM	IXYS	获取价格	High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode
DHG10I1200PM	LITTELFUSE	获取价格	SONIC系列提供改进的反向恢复特性，具有硬关断能力，击穿电压高达1800V。
DHG10I1800PA	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 1800V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT,
DHG10I1800PA	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 1800V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT,
DHG10I600PA	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 300V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT,
DHG10I600PM	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, TO-220AC, TO-220FPAB, 2 PI

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