Datasheet > DH2F100N4S

DH2F100N4S

更新时间： 2024-11-16 07:08:11

品牌	Logo	应用领域
ASEMI		二极管超快速软恢复二极管
页数	文件大小	规格书
4页	227K
描述
Ultra-Fast Soft Recovery Diode Module

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中文翻译

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DH2F100N4S 数据手册

DH2F100N4SE

Ultra-Fast Soft Recovery Diode Module

Description

Equivalent Circuit and Package

Ultra-FRD module devices are optimized to reduce losses

and EMI/RFI in high frequency powerconditioning electrical systems.

These diode modules are ideally suited for power converters,

motors drives and other applications where switching losses

are significant portion of the total losses.

Equivalent Circuit

Features

☞ Repetitive Reverse Voltage : V_RRM= 400V

☞ Low Forward Voltage Drop : V_F(typ.)= 1.1V

☞ Average Forward Current : I_F(AV.) = 100A @ Tc = 85℃

☞ Ultra-Fast Reverse Recovery Time : t_rr(typ.)= 50ns

☞ Extensive Characterization of Recovery Parameters

☞ Reduced EMI and RFI

(Common Heat Sink)

Package : 3DM - 2NIE Series

☞ Non Isolation Type Package and 175℃ Operating Junction Temperature

☞ Dual FRD Construction

Applications

Non Isolation Type

High Speed & High Power Converters, Welders,

Various Switching and Telecommunication PowerSupply.

Please see the package Out line information

Ordering Information

Device Name

DH2F100N4SE

Common Heat Sink

Non Isolation Type

Optional

Information

Absolute Maximum Ratings^{@ T}_j^{=25℃(Per Leg)}

Symbol

Parameter

Conditions

Ratings

Unit

V_RRM

V_R(DC)

I_F(AV)

Repetitive Peak Reverse Voltage

Reverse DC Voltage

400

320

180

100

2000

Average Forward Current

@ Tc = 25℃

@ Tc = 85℃

Resistive Load

I_FSM

Surge(non-repetitive) Forward

Current

I²t for Fusing

One Half Cycle at 60Hz,

Peak Value

Value for One Cycle Current,

t_w= 8.3ms, T_j= 25℃ Start

I²

16.7 * 10³

A²s

T_j

T_stg

Junction Temperature

Storage Temperature

Mounting Torque(M6)

TerminalTorque(M6)

Weight

-40 ~ 175

-40 ~ 150

4.0

℃

N.m

Typical Including Screws

3.0

1/4

12 3 4

中文翻译

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