Datasheet > DGZC75N65CTS2A

DGZC75N65CTS2A

更新时间： 2024-11-15 17:01:23

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
10页	1077K
描述
TO-247-4L

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中文翻译

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数据手册

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DGZC75N65CTS2A 数据手册

RoHS

DGZC75N65CTS2A

COMPLIANT

IGBT Discrete

V_CE

I_C

650

V_CE(SAT)I_C=₇₅A

1.45

Applications

Circuit



Resonant converters

Uninterruptible power supplies

Welding converters

Mid to high range switching frequency converters

Features



High speed smooth switching device for hard & soft

switching



Maximum junction temperature 175℃

Positive temperature coefficient

High ruggedness, temperature stable

Maximum Ratings

Parameter

Symbol

V_CE

Value

650

Unit

Collector-Emitter Breakdown Voltage

DC Collector Current, limited by T_jmax

T_C= 25°C value limited by bondwire

T_C= 100°C

I_C

Diode Forward Current, limited by T_jmax

T_C= 25°C value limited by bondwire

T_C= 100°C

I_F

V_GE

±20

±30

300

Continuous Gate-Emitter Voltage

Transient Gate-Emitter Voltage

(tp≤10µs,D<0.010)

Turn off Safe Operating Area V_CE≤ 650V,

T_j≤ 150°C

Pulsed Collector Current, V_GE=15V,

tp limited by T_jmax

I_CM

I_Fpuls

P_tot

300

428

Diode Pulsed Current, tp limited by T_jmax

Power Dissipation , Tj=175°C,Tc=25°C

S-M451D

www.21yangjie.com

Rev.1.0, 28-Sep-23

12 3 4 5 6 7...10

中文翻译

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