RoHS
DGZ75N65CTH2A
COMPLIANT
IGBT Discrete
VCE
IC
650
75
V
A
V
VCE(SAT) IC=75A
1.65
Applications
Solar converters
Uninterruptible power supplies
Welding converters
Circuit
Mid to high range switching frequency converters
Features
High speed smooth switching device for hard & soft
switching
Maximum junction temperature 175℃
Positive temperature coefficient
High ruggedness, temperature stable
Maximum Ratings
Parameter
Symbol
VCE
Value
650
Unit
V
Collector-Emitter Breakdown Voltage
DC Collector Current, limited by Tjmax
TC= 25°C value limited by bondwire
TC= 100°C
85
80
IC
A
Diode Forward Current, limited by Tjmax
TC= 25°C value limited by bondwire
TC= 100°C
85
80
IF
A
V
V
A
VGE
VGE
±20
±30
300
Continuous Gate-Emitter Voltage
Transient Gate-Emitter Voltage
(tp≤10µs,D<0.010)
Turn off Safe Operating Area VCE≤ 650V,
Tj≤ 150°C
Pulsed Collector Current, VGE=15V,
tp limited by Tjmax
ICM
IFpuls
Ptot
300
300
428
A
A
Diode Pulsed Current, tp limited by Tjmax
W
Power Dissipation , Tj=175°C,Tc=25°C
S-M431D
www.21yangjie.com
Rev.1.0, 28-Jul-23
1