RoHS
DGZ50N65CTS2A
COMPLIANT
IGBT Discrete
VCE
IC
650
50
V
A
V
VCE(SAT) IC=50A
1.40
Applications
Circuit
Solar converters
Uninterruptible power supplies
Welding converters
Mid to high range switching frequency converters
Features
High speed smooth switching device for hard & soft
switching
Maximum junction temperature 175℃
Positive temperature coefficient
High ruggedness, temperature stable
Maximum Ratings
Parameter
Symbol
VCE
Value
650
Unit
V
Collector-Emitter Breakdown Voltage
DC Collector Current, limited by Tjmax
TC= 25°C value limited by bondwire
TC= 100°C
80
60
IC
A
Diode Forward Current, limited by Tjmax
TC= 25°C value limited by bondwire
TC= 100°C
80
60
IF
A
V
V
VGE
VGE
±20
±30
200
Continuous Gate-Emitter Voltage
Transient Gate-Emitter Voltage
(tp≤10µs,D<0.010)
Turn off Safe Operating Area VCE≤ 650V,
Tj≤ 150°C
A
Pulsed Collector Current, VGE=15V,
tp limited by Tjmax
ICM
IFpuls
Ptot
200
200
283
A
A
Diode Pulsed Current, tp limited by Tjmax
W
Power Dissipation , Tj=175°C,Tc=25°C
S-M456D
www.21yangjie.com
Rev.1.0, 8-Oct-23
1