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DGSK20-022AS PDF预览

DGSK20-022AS

更新时间: 2024-11-09 19:58:19
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
2页 49K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 9A, 220V V(RRM), Gallium Arsenide, TO-263AB, TO-263AB, 3 PIN

DGSK20-022AS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:GALLIUM ARSENIDE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.5 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3最大非重复峰值正向电流:20 A
元件数量:2相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:9 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:220 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DGSK20-022AS 数据手册

 浏览型号DGSK20-022AS的Datasheet PDF文件第2页 
DGSK 20-022AS  
DGSK 20-025AS  
IFAV  
VRRM  
= 2x12 A  
= 220/250 V  
Gallium Arsenide Schottky Rectifier  
CJunction = 18 pF  
Preliminary Data  
TO-263 AB  
VRSM  
V
VRRM  
V
Type  
A
A
C (TAB)  
220  
250  
220  
250  
DGSK 20-022AS  
DGSK 20-025AS  
A
C
A
A = Anode, C = Cathode  
Symbol  
Conditions  
Maximum Ratings  
Features  
Low forward voltage  
IFAV  
IFAV  
TC = 25°C; DC  
TC = 90°C; DC  
12  
9
A
A
Very high switching speed  
Low junction capacity of GaAs  
- low reverse current peak at turn off  
Soft turn off  
Temperature independent switching  
behaviour  
IFSM  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
20  
A
TVJ  
Tstg  
-55...+175  
-55...+150  
°C  
°C  
High temperature operation capability  
Epoxy meets UL 94V-0  
Ptot  
TC = 25°C  
34  
W
Applications  
MHz Switched mode power supplies  
(SMPs)  
Small size SMPs  
High frequency converters  
Resonant converters  
Symbol  
IR ꢀ  
VF  
Conditions  
Characteristic Values  
typ.  
max.  
TVJ = 25°C VR = VRRM  
TVJ = 125°C VR = VRRM  
1.3  
mA  
mA  
1.3  
IF = 5 A;  
IF = 5 A;  
TVJ = 125°C  
TVJ = 25°C  
1.3  
1.2  
V
V
1.5  
4.4  
CJ  
VR = 100 V; TVJ = 125°C  
18  
pF  
K/W  
g
RthJC  
Weight  
2
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, Conditions and dimensions.  
© 2001 IXYS All rights reserved  
1 - 2  

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