Datasheet > DGS80N120ATL1BQ

DGS80N120ATL1BQ

更新时间： 2024-11-08 17:01:59

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
9页	679K
描述
STO 220

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中文翻译

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数据手册

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DGS80N120ATL1BQ 数据手册

RoHS

DGS80N120ATL1BQ

COMPLIANT

IGBT Discrete

V_CE

1200

I_C

V_CE(SAT)I_C=80A

P_D

1.75

735

Circuit

Applications



PTC heater

Features



High breakdown voltage to 1200V for improved

reliability



Maximum junction temperature 150℃

Positive temperature coefficient

Qualified to AEC-Q101



Maximum Ratings

Parameter

Symbol

V_CE

Value

1200

Unit

Collector-Emitter Breakdown Voltage

DC Collector Current, limited by T_jmax

145*

T_C= 25°C

I_C

T_C= 100°C

V_GE

±20

±30

Continuous Gate-Emitter Voltage

Transient Gate-Emitter Voltage

(tp≤10µs,D<0.010)

Turn off Safe Operating Area V_CE≤1200V,

T_j≤ 150°C

240

Pulsed Collector Current, V_GE=15V,

tp limited by T_jmax

I_CM

240

735

Power Dissipation , Tj=150°C，Tc=25°C

P_tot

*Bond wire current limit is 80A

S-M468

www.21yangjie.com

Rev.1.1, 04-Dec-23

12 3 4 5 6 7...9

中文翻译

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