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DGS20-022AS PDF预览

DGS20-022AS

更新时间: 2024-11-07 19:52:03
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
1页 22K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 9A, 220V V(RRM), Gallium Arsenide, TO-263AB, TO-263AB, 3 PIN

DGS20-022AS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
包装说明:TO-263AB, 3 PIN针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.75
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:GALLIUM ARSENIDE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.5 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3最大非重复峰值正向电流:30 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:9 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:220 V最大反向恢复时间:0.014 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DGS20-022AS 数据手册

  
DGS 20-022AS  
DGS 20-025AS  
IDC  
VRRM = 220/250 V  
trr = 14 ns  
= 13 A  
Gallium Arsenide Schottky Rectifier  
Preliminary Data  
VRSM  
V
VRRM  
V
Type  
TO-263 AB  
A
C
A
220  
250  
220  
250  
DGS 20-022AS  
DGS 20-025AS  
A
C (TAB)  
A = Anode, C = Cathode , TAB = Cathode  
Symbol  
Conditions  
Maximum Ratings  
Features  
Low forward voltage  
Very high switching speed –  
low IRM, trr values  
Soft reverse recovery  
Temperature independent switching  
behaviour  
IDC  
TC = 90°C;  
13  
30  
30  
A
A
A
IFRM  
IFSM  
TC = 25°C; (at rated VR, Sqare Wave, 20 kHz)  
tp = 8.3 ms; sine  
TVJ  
-55...+175  
175  
°C  
°C  
°C  
High temperature operation capability  
TVJM  
Tstg  
-55...+150  
Applications  
Switched mode power supplies (SMPS)  
High frequency converters  
Resonant converters  
Ptot  
TC = 25°C  
48  
W
Outline TO-263 AB  
Symbol  
VF  
Conditions  
Characteristic Values  
typ.  
max.  
IF = 7.5 A  
IF = 7.5 A  
IF = 15 A  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
1.2  
1.3  
1.9  
1.5  
V
V
V
IR  
VR = ½ VRRM TVJ = 25°C  
VR = ½ VRRM TVJ = 125°C  
20  
100  
µA  
µA  
VR = VRRM  
TVJ = 25°C  
2
mA  
IRM  
trr  
VR = 100 V; TVJ = 25°C...150°C  
IF = 7.5 A; di/dt = -200 A/µs  
1.8  
14  
A
ns  
Dim.  
Millimeter  
Inches  
Min. Max.  
RthJC  
3.1 K/W  
g
Min.  
Max.  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
Weight  
2
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
Data according to DIN/IEC 747 and per diode unless otherwise specified  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.315  
.380  
.350  
E
E1  
e
9.65  
6.22  
2.54 BSC  
10.29  
8.13  
.380  
.245  
.100 BSC  
.405  
.320  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.20  
.575  
.090  
.040  
.050  
0
.625  
L1  
L2  
L3  
L4  
.110  
.055  
.070  
.008  
R
0.46  
0.74  
.018  
.029  
© 1999 IXYS All rights reserved  
1 - 1  

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