Datasheet > DGQ75N120CTH1B

DGQ75N120CTH1B

更新时间： 2024-04-09 19:01:28

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
9页	767K
描述
TO 247 plus

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数据手册

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DGQ75N120CTH1B 数据手册

RoHS

DGQ75N120CTH1B

COMPLIANT

IGBT Discrete

V_CE

1200

I_C

V_CE(SAT)I_C=75A

2.10

Applications

Circuit



Inverter for motor drive

Welding converters

Uninterruptible power supply

Features



High breakdown voltage to 1200V for improved

reliability



Maximum junction temperature 175℃

Positive temperature coefficient

Including fast & soft recovery anti-parallel FWD



Maximum Ratings

Parameter

Symbol

V_CE

Value

1200

Unit

Collector-Emitter Breakdown Voltage

DC Collector Current, limited by T_jmax

150

T_C= 25°C

I_C

T_C= 100°C

Diode Forward Current, limited by T_jmax

120

T_C= 25°C

I_F

T_C= 100°C

V_GE

±20

±30

Continuous Gate-Emitter Voltage

Transient Gate-Emitter Voltage

(tp≤10µs,D<0.010)

Turn off Safe Operating Area V_CE≤1200V,

T_j≤ 150°C

300

Pulsed Collector Current, V_GE=15V,

tp limited by T_jmax

I_CM

I_Fpuls

P_tot

300

600

Diode Pulsed Current, tp limited by T_jmax

Power Dissipation , Tj=175°C ，Tc=25°C

S-M388D

www.21yangjie.com

Rev.1.1, 5-Jun-23

12 3 4 5 6 7...9

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