Datasheet > DGQ100N65CTL1D

DGQ100N65CTL1D

更新时间： 2024-11-20 15:19:19

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
11页	955K
描述
TO 247 plus

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中文翻译

获取价格

数据手册

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DGQ100N65CTL1D 数据手册

RoHS

DGQ100N65CTL1D

COMPLIANT

IGBT Discrete

V_CE

650

100

1.25

I_C

V_CE(SAT)I_C=₁₀₀

Applications

Circuit



General purpose inverters

Motor drives

Uninterruptible power supply

Features



High speed smooth switching device for hard &

soft switching



Maximum junction temperature 175℃

Positive temperature coefficient

High ruggedness, temperature stable

Maximum Ratings

Parameter

Symbol

V_CE

Value

650

Unit

Collector-Emitter Breakdown Voltage

DC Collector Current, limited by T_jmax

T_C= 25°C value limited by bondwire

T_C= 100°C

160

100

I_C

Diode Forward Current, limited by T_jmax

T_C= 25°C value limited by bondwire

T_C= 100°C

160

100

I_F

V_GE

±20

±30

Continuous Gate-Emitter Voltage

Transient Gate-Emitter Voltage

(tp≤10µs,D<0.010)

V_GE

Turn off Safe Operating Area V_CE≤650V,

T_j≤ 150°C

400

Pulsed Collector Current, V_GE=15V,

tp limited by T_jmax

I_CM

I_Fpuls

P_tot

400

428

Diode Pulsed Current, tp limited by T_jmax

Power Dissipation , Tj=175°C,Tc=25°C

S-M396D

www.21yangjie.com

Rev.1.0, 10-May-23

12 3 4 5 6 7...11

中文翻译

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