是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | DIP, DIP18,.3 | Reach Compliance Code: | unknown |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.63 |
Is Samacsys: | N | 模拟集成电路 - 其他类型: | SINGLE-ENDED MULTIPLEXER |
最大输入电压: | 2.4 V | JESD-30 代码: | R-CDIP-T18 |
长度: | 22.605 mm | 负电源电压最大值(Vsup): | -17 V |
标称负供电电压 (Vsup): | -15 V | 信道数量: | 8 |
功能数量: | 1 | 端子数量: | 18 |
标称断态隔离度: | 68 dB | 最大通态电阻 (Ron): | 500 Ω |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
输出: | COMMON OUTPUT | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装等效代码: | DIP18,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
电源: | +-15 V | 认证状态: | Not Qualified |
座面最大高度: | 5.08 mm | 最大信号电流: | 0.02 A |
子类别: | Multiplexer or Switches | 最大供电电流 (Isup): | 2.5 mA |
最大供电电压 (Vsup): | 17 V | 标称供电电压 (Vsup): | 15 V |
表面贴装: | NO | 最长断开时间: | 1000 ns |
最长接通时间: | 1500 ns | 切换: | BREAK-BEFORE-MAKE |
技术: | CMOS | 温度等级: | MILITARY |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 宽度: | 7.62 mm |
Base Number Matches: | 1 |
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