Datasheet > DG50F12T3

DG50F12T3

更新时间： 2024-12-01 17:01:51

品牌	Logo	应用领域
斯达半导体 - STARPOWER		双极性晶体管
页数	文件大小	规格书
6页	111K
描述
T3.0-Advanced Trench FS Ultra Fast IGBT Without Short-circuit Capacity

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DG50F12T3 数据手册

DG50F12T3

IGBT Discrete

DOSEMI

IGBT

DG50F12T3

1200V/50A IGBT with Diode

General Description

DOSEMI IGBT Power Discrete provides ultra

low conduction loss as well as low switching loss.

They are designed for the applications such as

general inverters and UPS.

Features



Low V_CE(sat)Fast IGBT technology

10μs short circuit capability

Low switching loss

TO-264

Maximum junction temperature 175^oC

Low inductance case

_CE(sat)with positive temperature coefficient

Fast & soft reverse recovery anti-parallel FWD

Lead free package

Typical Applications



Inverter for motor drive

AC and DC servo drive amplifier

Uninterruptible power supply

Equivalent Circuit Schematic

2/16/2017

1/6

Preliminary

12 3 4 5 6

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