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DG444BDN PDF预览

DG444BDN

更新时间: 2024-11-19 22:50:47
品牌 Logo 应用领域
威世 - VISHAY 复用器开关复用器或开关信号电路输出元件
页数 文件大小 规格书
7页 109K
描述
Improved Quad SPST CMOS Analog Switches

DG444BDN 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:QFN
包装说明:HVQCCN, LCC16,.16SQ,25针数:16
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.02Is Samacsys:N
模拟集成电路 - 其他类型:SPSTJESD-30 代码:S-XQCC-N16
JESD-609代码:e0长度:4 mm
标称负供电电压 (Vsup):-15 V正常位置:NC
信道数量:1功能数量:4
端子数量:16标称断态隔离度:90 dB
最大通态电阻 (Ron):80 Ω最高工作温度:85 °C
最低工作温度:-40 °C输出:SEPARATE OUTPUT
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装等效代码:LCC16,.16SQ,25封装形状:SQUARE
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):240
电源:12/+-15 V认证状态:Not Qualified
座面最大高度:1 mm子类别:Multiplexer or Switches
标称供电电压 (Vsup):15 V表面贴装:YES
最长断开时间:200 ns最长接通时间:300 ns
切换:BREAK-BEFORE-MAKE技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:NO LEAD端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:4 mmBase Number Matches:1

DG444BDN 数据手册

 浏览型号DG444BDN的Datasheet PDF文件第2页浏览型号DG444BDN的Datasheet PDF文件第3页浏览型号DG444BDN的Datasheet PDF文件第4页浏览型号DG444BDN的Datasheet PDF文件第5页浏览型号DG444BDN的Datasheet PDF文件第6页浏览型号DG444BDN的Datasheet PDF文件第7页 
DG444B/445B  
Vishay Siliconix  
New Product  
Improved Quad SPST CMOS Analog Switches  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low On-Resistance: 45 W  
D Low Signal Errors and Distortion  
D Audio Switching  
D Low Power Consumption: 1.0 mW  
D Fast Switching Action—tON: 120 ns  
D Low Charge Injection  
D Reduced Power Supply Consumption D Data Acquisition  
D Faster Throughput  
D Reduced Pedestal Errors  
D Simple Interfacing  
D Sample-and-Hold Circuits  
D Communication Systems  
D Automatic Test Equipment  
D Medical Instruments  
D TTL/CMOS Logic Compatible  
DESCRIPTION  
The DG444B/445B are monolithic quad analog switches  
designed to provide high speed, low error switching of analog  
and audio signals. The DG444B/445B are upgrades to the  
original DG444/445.  
been minimized on the drain for use in sample-and-hold  
circuits.  
The DG444B/445B are built using Vishay Siliconix’s  
high-voltage silicon-gate process. An epitaxial layer prevents  
latchup.  
Combing low on-resistance (45 , typ.) with high speed (tON  
120 ns, typ.), the DG444B/445B are ideally suited for Data  
Acquisition, Communication Systems, Automatic Test  
Equipment, or Medical Instrumentation. Charge injection has  
When on, each switch conducts equally well in both directions  
and blocks input voltages to the supply levels when off.  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
DG444B  
Dual-In-Line and SOIC  
IN  
D
IN  
D
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
2
1
1
1
2
S
S
2
TRUTH TABLE  
V+  
V  
Logic  
DG444B  
DG445B  
V
L
GND  
0
1
ON  
OFF  
ON  
S
3
S
4
OFF  
D
4
D
3
Logic “0” 0.8 V  
Logic “1” 2.4 V  
IN  
4
IN  
3
Top View  
ORDERING INFORMATION  
DG444B  
QFN16 (4x4 mm)  
Temp Range  
Package  
Part Number  
D
1
IN IN  
D
2
1
2
DG444BDJ  
DG445BDJ  
DG444BDY  
DG445BDY  
DG444BDN  
DG445BDN  
16 15 14 13  
16-Pin Plastic DIP  
S
1
S
2
12  
11  
10  
9
40 to 85_C  
16-Pin Narrow SOIC  
16-Pin QFN 4x4 mm  
1
V−  
2
3
4
V+  
V
L
GND  
S
4
S
3
5
6
7
8
D
4
IN IN  
D
3
4
3
Top View  
Document Number: 72626  
S-32554—Rev. A, 15-Dec-03  
www.vishay.com  
1

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