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DG417BDQ PDF预览

DG417BDQ

更新时间: 2024-11-22 22:50:47
品牌 Logo 应用领域
威世 - VISHAY 复用器开关复用器或开关信号电路光电二极管
页数 文件大小 规格书
9页 109K
描述
Precision CMOS Analog Switches

DG417BDQ 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:MSOP
包装说明:TSSOP, TSSOP8,.19针数:8
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.29Is Samacsys:N
其他特性:ALSO OPERATES WITH 12 V NOMINAL SINGLE SUPPLY模拟集成电路 - 其他类型:SPST
JESD-30 代码:S-PDSO-G8JESD-609代码:e0
长度:3 mm标称负供电电压 (Vsup):-15 V
正常位置:NO信道数量:1
功能数量:1端子数量:8
标称断态隔离度:86 dB最大通态电阻 (Ron):25 Ω
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.19封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):240
电源:12/+-15 V认证状态:Not Qualified
座面最大高度:1.1 mm子类别:Multiplexer or Switches
标称供电电压 (Vsup):15 V表面贴装:YES
最长断开时间:80 ns最长接通时间:89 ns
切换:BREAK-BEFORE-MAKE技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3 mmBase Number Matches:1

DG417BDQ 数据手册

 浏览型号DG417BDQ的Datasheet PDF文件第2页浏览型号DG417BDQ的Datasheet PDF文件第3页浏览型号DG417BDQ的Datasheet PDF文件第4页浏览型号DG417BDQ的Datasheet PDF文件第5页浏览型号DG417BDQ的Datasheet PDF文件第6页浏览型号DG417BDQ的Datasheet PDF文件第7页 
DG417B/418B/419B  
New Product  
Vishay Siliconix  
Precision CMOS Analog Switches  
FEATURES  
BENEFITS  
APPLICATIONS  
D "15-V Analog Signal Range  
D Wide Dynamic Range  
D Precision Test Equipment  
D Precision Instrumentation  
D Battery Powered Systems  
D Sample-and-Hold Circuits  
D Military Radios  
D On-Resistance—rDS(on): 15  
D Low Signal Errors and Distortion  
D Fast Switching Action—tON: 100 ns D Break-Before-Make Switching Action  
D TTL and CMOS Compatible  
D Simple Interfacing  
D MSOP-8 and SOIC-8 Packaging  
D Reduced Board Space  
D Improved Reliability  
D Guidance and Control Systems  
D Hard Disk Drives  
DESCRIPTION  
The DG417B/418B/419B monolithic CMOS analog switches  
were designed to provide high performance switching of  
analog signals. Combining low power, low leakages, high  
speed, low on-resistance and small physical size, the DG417B  
series is ideally suited for portable and battery  
powered industrial and military applications requiring high  
performance and efficient use of board space.  
high voltage silicon gate (HVSG) process. Break-before-make  
is guaranteed for the DG419B, which is an SPDT  
configuration. An epitaxial layer prevents latchup.  
Each switch conducts equally well in both directions when on,  
and blocks up to the power supply level when off.  
To achieve high-voltage ratings and superior switching  
performance, the DG417B series is built on Vishay Siliconix’s  
The DG417B and DG418B respond to opposite control logic  
levels as shown in the Truth Table.  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
DG417B  
Dual-In-Line, SOIC-8 and MSOP-8  
TRUTH TABLE  
1
2
3
4
8
7
6
5
S
NC  
D
Logic  
DG417B  
DG418B  
V-  
IN  
0
1
ON  
OFF  
ON  
GND  
V+  
OFF  
V
L
Logic “0” = v 0.8 V, Logic “1” = w 2.4 V  
Top View  
DG419B  
Dual-In-Line, SOIC-8 and MSOP-8  
TRUTH TABLEꢀDG419B  
1
2
3
4
8
7
6
5
D
S
2
Logic  
SW1  
SW2  
S
V-  
IN  
1
GND  
V+  
0
1
ON  
OFF  
ON  
OFF  
V
L
Logic “0” = v 0.8 V, Logic “1” = w 2.4 V  
Top View  
Document Number: 72107  
S-31538—Rev. B, 11-Aug-03  
www.vishay.com  
1
 

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